ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
From the temperature dependence of the hole concentration p(T) in a lightly Al-doped4H-SiC epilayer irradiated with several fluences of 200 keV electrons, the density of Al acceptorswith 0.2 V E + eV decreases significantly with increasing fluence, whereas the density of unknowndefects with 0.37 V E + eV increases with fluence and then decreases slightly. Although only Cvacancies increase with fluence because 200 keV electrons can displace only C atoms, only theincrease in the density of C monovacancies cannot explain the changes of p(T) by 200 keVelectron irradiation. It may be necessary to consider the relationship between C vacancies and Alacceptors
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.379.pdf
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