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  • 1
    Electronic Resource
    Electronic Resource
    Thioaldehyde anion radicals (1988)
    s.l. : American Chemical Society
    The @journal of organic chemistry 53 (1988), S. 1582-1584 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00242a052
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  • 2
    Electronic Resource
    Electronic Resource
    Structures and properties of electron-beam-evaporated indium tin oxide films as studied by x-ray photoelectron spectroscopy and work-function measurements (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4344-4350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO) films deposited on single-crystal Si wafers by the electron-beam-(EB) evaporation method have been investigated by x-ray photoelectron spectroscopy (XPS) together with work-function and resistivity measurements. The XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The amount of the crystalline phase with respect to the amorphous phase for the ITO films, deposited with the incident angle of the ITO vapor to the Si substrate θi at 0°, is smaller than that for the ITO films deposited at θi=45°. The amount of the crystalline phase hardly depends on the conditions of postdeposition heat treatments, while that of the amorphous phase increases by raising the temperature of the heat treatments. Metal indium present in the films deposited at θi=0° is transformed into amorphous indium oxide by heating at 450 °C in air. Metal tin is also present near the ITO/Si interface for the ITO films deposited at θi=0°. The work function of the ITO films deposited at θi=0° is lower by 0.8 eV in maximum than that for the films deposited at θi=45°. It is concluded that the work function of the ITO films increases not only with a decrease in the amount of metal indium and metal tin in the films but also with an increase in the amount of the crystalline ITO phase with respect to that of the amorphous phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352818
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  • 3
    Electronic Resource
    Electronic Resource
    Mechanism of carrier transport in highly efficient solar cells having indium tin oxide/Si junctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1736-1743 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier transport mechanism of the Si solar cells having n-Si/indium tin oxide (ITO) junctions has been studied by use of the current-voltage and capacitance-voltage measurements and x-ray photoelectron spectroscopy. An 11-A(ring)-thick nonstoichiometric Si oxide layer is formed when ITO is deposited by spray pyrolysis on a Si electrode etched with hydrofluoric acid. In this case, the tunneling probability of majority carriers through the oxide layer is high, and the thermionic emission current over the energy barrier in Si takes a dominant part of the dark current. On the other hand, for a Si electrode where a Si oxide layer is intentionally interposed between ITO and Si, the thermionic emission current is suppressed, and trap-assisted multistep tunneling through the depletion layer becomes dominant. By making a mat-structure treatment on the Si surface, a solar energy conversion efficiency of 13% and the photocurrent density of 42.5 mA cm−2 were attained under AM 1 100 mW cm−2 illumination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347220
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5288-5293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium tin oxide (ITO)/silicon oxide/silicon (Si) junction solar cells were produced by depositing ITO on a thin silicon oxide-covered single-crystal Si substrate using the electron-beam evaporation method. The current-voltage (I-V) characteristics strongly depended on the incident angle (θi) of the evaporated ITO vapor to the Si substrate during the ITO deposition, as well as the post-deposition heating temperature (Th) and the kind of the ambient gases during post-deposition heat treatment. The ITO films deposited at θi=0° and treated at Th=380 °C in air formed a high-energy barrier with p-Si, and formed ohmic contact with n-Si. X-ray diffraction analysis showed that the ITO films deposited at θi=0° contained metal indium. The amount of the metal indium decreased either by reducing the deposition rate of the ITO film or by raising the substrate temperature during the ITO deposition. The ITO films deposited at θi=45° and treated at Th=350∼450 °C in hydrogen, on the other hand, formed a high-energy barrier with n Si. In this case, no metal indium was observed in the ITO films. It is concluded that the formation of the metal indium in the ITO films changes their work functions, and thus its presence strongly affects the I-V characteristics of the ITO/silicon oxide/Si solar cells. Darkening observed for the ITO films deposited at θi=0° is also attributed to the presence of the metal indium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352013
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanism of carrier transport through a silicon-oxide layer for 〈indium-tin-oxide/silicon-oxide/silicon〉 solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3931-3939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of carrier transport through a thin silicon-oxide layer for 〈spray-deposited indium-tin-oxide (ITO)/silicon-oxide/Si〉 solar cells has been studied by measurements of the dark current density as a function of the thickness of the silicon-oxide layer, together with the observation of transmission electron micrographs. Cross-sectional transmission electron micrography shows that a uniform silicon-oxide layer with the thickness of ∼2 nm is present between ITO and Si when the ITO film is deposited on a flat Si(100) surface at 450 °C. The dark current density under a depletion condition strongly depends on the thickness of the silicon-oxide layer. It is concluded from these results that quantum mechanical tunneling is the dominant mechanism for the charge carrier transport through the silicon-oxide layer. On the other hand, when the ITO film is deposited on a mat-textured Si surface at the same temperature, a nonuniform silicon-oxide layer is formed, with ITO penetrating into the silicon-oxide layer in the top and valley regions of the pyramidal structure. By raising the deposition temperature of the ITO film on the flat Si(100) surface to 500 °C, the silicon-oxide layer becomes also nonuniform. For these diodes with the nonuniform silicon-oxide layer, the carrier transfer probability is less dependent on the thickness of the silicon-oxide layer, leading to the conclusion that minute channels of ITO are present in the silicon-oxide layer and charge carriers transfer through the channels. The photovoltage is decreased by the presence of the minute channels, with its magnitude depending on the density of the channels. The conversion efficiency of the 〈ITO/silicon-oxide/n-Si(100)〉 solar cells is unchanged upon illumination for 1000 h. The good cell stability is attributed to the well-crystallized ITO film which effectively suppresses diffusion of oxygen from the air and to low reactivity of ITO with Si at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359912
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  • 6
    Electronic Resource
    Electronic Resource
    Zinc oxide/n-Si junction solar cells produced by spray-pyrolysis method (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1301-1307 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zinc oxide (ZnO)/n-Si junction solar cells were fabricated by a spray-pyrolysis method and high short-circuit photocurrent densities and relatively high photovoltages were obtained by adjusting the conditions of the deposition and the post-deposition heat treatment. Consequently, relatively high conversion efficiencies ranging between 6.9% and 8.5% were obtained. The efficiency of the solar cells with ZnO/n-Si structure decreases slowly with time when they are kept in air in the dark because of the increase in the thickness of the silicon oxide layer between Si and the ZnO film. This degradation can be avoided by forming an indium-tin-oxide (ITO) overlayer on the ZnO film, indicating that the silicon oxide layer grows through the reaction of Si with oxygen diffusing from the atmosphere, not with ZnO. The efficiency of the ZnO/n-Si junction solar cells decreases rapidly with the illumination time. Capacitance-voltage measurements show that this degradation is caused by a decrease in the work function of the ZnO film. The decrease in the work function is caused by desorption of O−2 from the grain boundaries of the ZnO films. When incident light contains no ultraviolet (UV) component, this degradation does not occur, indicating that the desorption is caused by the acceptance of holes generated by UV light. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358932
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  • 7
    Electronic Resource
    Electronic Resource
    Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4075-4077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical degradation of AlInAs/GaInAs high electron mobility transistor (HEMT) due to the fluorine contamination is quantitatively explained through the comprehensive annealing experiments and bias-temperature tests. The thermal degradation rate is found to be mainly determined by the following electrochemical reaction of fluorine with donor species after the quite fast diffusion of fluorine into the AlInAs layer. It is also confirmed that the thermal degradation is stringently affected by the electric field resulting in the one-sided degradation near the anode. These findings are valuable knowledges in improving the reliability of AlInAs/GaInAs HEMT under the dc accelerated life test at high temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117823
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  • 8
    Electronic Resource
    Electronic Resource
    Critical temperature enhancement of Bi2Sr2CaCu2Ox by phenolization (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1457-1459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical temperature (Tc ) of the sintered superconductor Bi2 Sr2 CaCu2 Ox can be raised by soaking it in a solution of phenol and ethanol. After drying at room temperature, subsequent annealing at relatively low temperature (200 °C) further increases the Tc. The transition midpoint temperature increases from 71.9 to 93.0 K. A similar effect was observed by using phenolic-based GE7031 varnish as a reagent. Phenol appears to assist in raising the Tc of Bi2 Sr2 CaCu2 Ox.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102284
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of hydrogenated amorphous silicon by capacitance-voltage and surface photovoltage measurements using liquid Schottky barriers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1916-1927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been made on the electrical properties of hydrogenated amorphous silicon (a-Si:H) using liquid Schottky barriers. We have found that the quasi-static capacitance-voltage (C-V) method can be applied to the a-Si:H/quinone-hydroquinone (Q-HQ) liquid Schottky junction. This method enables us to determine the net density of positive space charge due to ionized traps and impurities in a-Si:H (Ne), the built-in potential (Vb), and the width of the surface space-charge layer (W), of this liquid junction. The barrier height of an undoped a-Si:H/Q-HQ junction has been estimated to be more than 1 eV from the value of Vb thus obtained. By C-V and surface photovoltage (SPV) measurements on the same samples, we have studied the changes in the properties of a-Si:H with doping and with prolonged illumination. It has been found that phosphorous (P) doping drastically decreases the hole diffusion length measured by the SPV method and increases the value of Ne. Slight boron (B) doping increases the ambipolar diffusion length L1 and the field assisted carrier collection length L2, both of which have been determined by SPV. These results explain the observed enhancement of the photovoltaic properties of a-Si:H p-i-n solar cells with the slight B doping to the i layers. The values of L1 and L2 have a distinct correlation with the photo-voltaic properties in the slightly B-doped samples, which has confirmed the effectiveness of the SPV method in characterizing a-Si:H as a photovoltaic material. We have found that the increase in Ne and the decrease in L1 occur simultaneously in undoped a-Si:H with prolonged illumination. On the other hand, the increase in Ne does not always accompany the decrease in L1 in the photoinduced changes in P-doped or slightly B-doped a-Si:H, which suggests the difference in the mechanism of the changes between undoped and doped samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338038
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  • 10
    Electronic Resource
    Electronic Resource
    Electrodeless measurement of ionic conductivity of RbAg4I5: Temperature dependence (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1311-1312 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electrodeless method has been applied to the measurement of an ionic conductivity of a single crystalline RbAg4I5 as a function of temperature. The activation energy obtained by this method is in good agreement with those of earlier works.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139460
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