ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In order to characterize traps in semi-insulating 4H-SiC that is regarded as an attractivesemiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS) thatis a graphical peak analysis method based on the transient reverse current of a diode. We havefound at least three types of traps whose emission rates at 373 K are 4.9×10-3, 8.3×10-3 and 8.0×10-2s-1. Since it is difficult to characterize traps in semi-insulating semiconductors by transientcapacitance methods, it is demonstrated that DCTS is a powerful method for determining thedensities and emission rates of traps in semi-insulating semiconductors
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.393.pdf
