Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
58 (1985), S. 1578-1583
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dark current-voltage characteristics of p-i-n hydrogenated amorphous silicon diodes with various thicknesses of the intrinsic layer (i-layer) (770–9300 A(ring)) are systematically investigated. The magnitude of the forward current is found to be independent of thickness of the i layer, which is obviously against the simple conventional junction theory. It has been demonstrated through various experiments that the forward current of amorphous p-i-n diodes is limited by a layer thinner than 770 A(ring), possibly being the p/i interface or a narrow zone of the i layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336044
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |