ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Secondary electron emission yields (SEEYs) were measured for silicon oxides which were thermally grown on doped silicon substrates. Generally, SEEY curves can be described by the so-called universal curve, i.e., one hump with a monotonic increase (decrease) before (after) the hump. However, we found that our thick oxide layers exhibited double-hump shaped SEEY curves instead of single-hump shaped curves. Additionally, we were able to change the shape of a SEEY curve with two humps to a curve with one hump, or vice versa, by varying the experimental parameters. This change in curve shape can be explained if we consider the competition between the oxide layer thickness and the electron's penetration depth, the charge accumulation due to emission of secondary electrons, and charge traps created during thermal oxidation at the same time. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1419046
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