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  • 1
    Electronic Resource
    Electronic Resource
    Large enhancement of the giant magnetoresistance in inhomogeneous semiconductors: Dependence on magnetic field direction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5789-5791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In high-mobility Hg1−xCdxTe (x=0.10), the physical giant magnetoresistance (GMR), due to the orbital motion of the carriers in the applied magnetic field, is apparent at high magnetic field (H〉1/μe). At low field (H〈1/μe), this is enhanced by a geometrical GMR associated with conducting inhomogeneities in the semiconductor. In previous work, we have presented a model which accounts quantitatively for the GMR enhancement. Here we report on the dependence of the GMR on the direction of the magnetic field. The transverse GMR shows the low-field boost expected; in the longitudinal case both the physical and the geometrical MR are expected to vanish, and indeed the measured longitudinal GMR is very small. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369920
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  • 2
    Electronic Resource
    Electronic Resource
    Self-biasing nonmagnetic giant magnetoresistance sensor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4105-4107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature giant magnetoresistance (GMR) has been measured in small band-gap thin-film Hg1−xCdxTe (x∼0.1) samples with Corbino disk electrode configurations. The GMR exhibits a zero-field offset of as much as 350 G at room temperature. The resultant asymmetry in the field dependence of the GMR constitutes a self-biasing effect. We show that this self-biasing results from spatial composition fluctuations in the sample and that the bias effect can be controlled by selective doping and/or deposition masking. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117833
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  • 3
    Electronic Resource
    Electronic Resource
    Extraordinary magnetoresistance in externally shunted van der Pauw plates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that extraordinary magnetoresistance (EMR) exhibited by a composite van der Pauw (vdP) disk consisting of a semiconductor with an internal shunt can also be obtained from an electrically equivalent, externally shunted structure that is amenable to fabrication in the mesoscopic sizes required for important magnetic sensor applications. As an example, we use bilinear conformal mapping to transform the composite vdP disk into an externally shunted rectangular plate and calculate its EMR by solving Laplace's equation with appropriate boundary conditions using no adjustable parameters. The calculations are in good agreement with measurements of InSb plates with Au shunts. Room-temperature EMR values as high as 550% at 0.05 T are obtained. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343472
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