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  • 1
    Electronic Resource
    Electronic Resource
    Writing erasable metallic patterns in insulating AlxGa1−xAs:DX (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1802-1804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have optically written persistent but erasable metallic features in insulating epilayers of AlxGa1−xAs doped with Si and Se, which form DX centers. The photocarriers, which remain in the AlxGa1−xAs layer, move freely in the conduction band but are confined to the exposed regions. We demonstrate this confinement by optical excitation in a striped pattern; the resulting modulation of the free carrier density is evinced by an anisotropy of the sample conductance parallel and perpendicular to the stripes. The anisotropy, like the photoconductivity itself, is persistent at low temperatures. Erasure is achieved by thermal annealing. We estimate that features can be written with better than 1000 A(ring) resolution. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113001
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  • 2
    Electronic Resource
    Electronic Resource
    Diffraction from optically written persistent plasma gratings in doped compound semiconductors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 16-18 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a new type of optical nonlinearity based on the properties of the DX center in doped compound semiconductors. We report measurements on samples of AlGaAs:Si which were exposed to interfering laser beams and find diffraction from a large, persistent refractive index change associated with the well-known persistent photoconductivity effect in this material. The new effect is shown to exhibit a refractive index change 30 times larger than that of conventional photorefractive materials. We explain the origin of the refractive index change in terms of the plasma effect and show that its expected magnitude is consistent with our observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113057
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  • 3
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in Si delta-doped GaAs at low doping concentration (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3235-3237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In addition to the persistent photoconductivity (PPC) attributed to DX centers in GaAs delta-doped with Si, a weak PPC (WPPC) with a PPC carrier density independent of Si-doping concentration has been generally reported at ambient atmosphere, but the nature of the deep states responsible has not been elucidated. Here, we present the results of a detailed study of the WPPC in δ-GaAs:Si at low-doping densities, NSi(approximate)1–3×1012 cm−2, and ambient pressure. It is concluded that the WPPC does not arise from DX centers but from another deep defect, which is DX-like in the sense that it can be metastably excited. The presence of two distinct DX-like states is apparent from two separate annealing temperatures of the PPC, Ta(approximate)50 K and Tb(approximate)230 K; to the best of our knowledge, the latter is the highest annealing temperature observed in the AlGaAs:Si system. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122729
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  • 4
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance enhancement in inhomogeneous semiconductors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3497-3499 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the low-field magnetoresistance (MR) of a semiconductor with inhomogeneities which are more conducting than the surrounding matrix is enhanced significantly compared to that of the homogeneous material. The enhancement results from a magnetic field induced geometric effect in which at high field the current is deflected around the conducting inhomogeneity. A model based on previous work by Wolfe et al. has been augmented to include the physical MR. The augmented model is used to account quantitatively for a 50-fold anomalous enhancement of the giant magnetoresistance (GMR) observed at low field in (near) zero-band-gap thin-film Hg1−xCdxTe (x(approximate)0.1). The practical implications of the GMR boost are noted. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121639
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  • 5
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity and DX centers in Cd0.8Zn0.2Te:Cl (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5827-5829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport measurements on large single crystals of Cd0.8Zn0.2Te:Cl indicate that Cl donors form DX centers in CdZnTe. We have observed persistent photoconductivity (PPC) with an annealing temperature Ta≈130 K. Hall-effect experiments indicate that the PPC arises from a persistent increase in the density of charge carriers; the saturation density is Nsat=6×1016 cm−3. The deep binding energy of the DX center is Ed=0.22 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359648
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  • 6
    Electronic Resource
    Electronic Resource
    Large enhancement of the giant magnetoresistance in inhomogeneous semiconductors: Dependence on magnetic field direction (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5789-5791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In high-mobility Hg1−xCdxTe (x=0.10), the physical giant magnetoresistance (GMR), due to the orbital motion of the carriers in the applied magnetic field, is apparent at high magnetic field (H〉1/μe). At low field (H〈1/μe), this is enhanced by a geometrical GMR associated with conducting inhomogeneities in the semiconductor. In previous work, we have presented a model which accounts quantitatively for the GMR enhancement. Here we report on the dependence of the GMR on the direction of the magnetic field. The transverse GMR shows the low-field boost expected; in the longitudinal case both the physical and the geometrical MR are expected to vanish, and indeed the measured longitudinal GMR is very small. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369920
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of mesoscopic devices from graphite microdisks (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2474-2476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural and transport properties of individual micron-sized graphitic disks with less than one hundred graphene layers are measured. Mesoscopic devices of any arbitrary geometry can be fabricated at the center of such disks by focussed ion beam lithography, with the rest of the disk serving as low-resistance contacts. Our approach is exemplified by the fabrication and characterization of 30 to 60 nm wide point-contact devices. A size effect is revealed by the suppression of the magnetoresistance in constrictions narrower than the smallest attained cyclotron orbit for fields up to 10 T. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407306
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  • 8
    Electronic Resource
    Electronic Resource
    Fiber image guide with subwavelength resolution (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1137-1139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A coherent fiber image guide comprised of individual fibers with a core diameter as small as 250 nm is reported. By using optical fibers with a very large difference between the indices of refraction of the core and cladding materials, efficient containment of light inside the core is achieved even for submicron core diameters, without the need for metallization. Images with subwavelength resolution are obtained with such an image guide. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120994
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  • 9
    Electronic Resource
    Electronic Resource
    Self-biasing nonmagnetic giant magnetoresistance sensor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4105-4107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature giant magnetoresistance (GMR) has been measured in small band-gap thin-film Hg1−xCdxTe (x∼0.1) samples with Corbino disk electrode configurations. The GMR exhibits a zero-field offset of as much as 350 G at room temperature. The resultant asymmetry in the field dependence of the GMR constitutes a self-biasing effect. We show that this self-biasing results from spatial composition fluctuations in the sample and that the bias effect can be controlled by selective doping and/or deposition masking. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117833
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