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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1802-1804 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have optically written persistent but erasable metallic features in insulating epilayers of AlxGa1−xAs doped with Si and Se, which form DX centers. The photocarriers, which remain in the AlxGa1−xAs layer, move freely in the conduction band but are confined to the exposed regions. We demonstrate this confinement by optical excitation in a striped pattern; the resulting modulation of the free carrier density is evinced by an anisotropy of the sample conductance parallel and perpendicular to the stripes. The anisotropy, like the photoconductivity itself, is persistent at low temperatures. Erasure is achieved by thermal annealing. We estimate that features can be written with better than 1000 A(ring) resolution. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 16-18 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a new type of optical nonlinearity based on the properties of the DX center in doped compound semiconductors. We report measurements on samples of AlGaAs:Si which were exposed to interfering laser beams and find diffraction from a large, persistent refractive index change associated with the well-known persistent photoconductivity effect in this material. The new effect is shown to exhibit a refractive index change 30 times larger than that of conventional photorefractive materials. We explain the origin of the refractive index change in terms of the plasma effect and show that its expected magnitude is consistent with our observations.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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