Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 4540-4543
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Optical measurements are performed near the fundamental absorption edge for single-crystal AlxGa1−x N epitaxial layers in the composition range of 0≤x≤0.4. The dependence of the energy band gap on composition is found to deviate downwards from linearity, the bowing parameter being b=1.0±0.3 eV. The origin of the large bowing is discussed in terms of the pseudopotential of Al and Ga based on the pseudopotential of the Heine–Abarenkov type. With increasing x the absorption edges broaden, which is attributed to the increase of the compositional nonuniformity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338387
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