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  • 1
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: To determine the importance of silkworm moth allergens, we tested 267 patients with allergic rhinitis with CAP-RAST®, a new assay system for detecting specific IgE in sera. We used the following allergen sources: house-dust mite, Candida, Altemaria, cat dander, orchard grass, ragweed, mugwort, Japanese hops, Japanese cedar, Japanese cypress, cotton, silk, larval chironomid midge, adult chironomid midge, and silkworm moth. As expected, the highest positive rate of reaction, as determined by CAP-RAST, was 73.8% for Japanese cedar, followed by 53.2% for mite and 50.6% for Japanese cypress. Although the positive rate for silkworm moth was not as high as for cedar pollen, one-third of patients had specific IgE against silkworm moth. The positive rate of reaction to silkworm moth was much higher than that to chironomid. It was interesting to note that the patients reported had not been documented as having frequent contact with silkworm moth allergen. Correlations between silkworm moth and silk, and silkworm moth and chironomid midge were found to be significant (P 〈0.001). Silkworm moth allergen showed the third highest reaction rate in patients with severe symptoms. These results suggest that silkworm moth allergen should be considered to be important in patients with allergic rhinitis in Japan.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4730-4732 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the linear response theory of the electric transport in magnetic nanostructures. The conductance is expressed by using the wave functions of electrons on the Fermi level in the mean field theory at zero temperature. The theory is extended to the system with single resistive layer in which there exists electron–electron interaction and the conductance is derived in the single-site approximation. The theoretical results may be applied to a variety of magnetic nanostructures such as magnetic multilayers and ferromagnetic tunneling junctions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 282-287 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide layers etched at an angle were fabricated on a 6H-SiC substrate by varying etching time in diluted hydrofluoric acid, and 6H-SiC metal–oxide–semiconductor structures with various oxide thicknesses were formed. High-frequency capacitance–voltage measurements were carried out for determining the change in gate voltages corresponding to the midgap condition as a function of the thickness of the oxide layer, and the depth profile of trapped charge density in the oxide was estimated from the result. It is found that negative charges build up near the 6H-SiC/SiO2 interface, and that positive charges accumulate in the region at 40 nm from the interface. No significant difference is observed in the depth profiles of the trapped charge density between the oxide layers on the carbon and silicon faces. The origin of these trapped charges is discussed in conjunction with the carbon-related compounds in the oxide layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1657-1662 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electric and magnetic characteristics of a Co-Fe-Si-B-based amorphous thin wire with a diameter of 120 μm were investigated at low temperatures from an applicative point of view. The electric resistivity decreases with the decrease of temperature and has the minimum point at about 30 K. The maximum decrease of the resistivity is, however, only 2.7% as compared with that at room temperature. The magnetic characteristics in term of the coercive force, the saturation induction, and the maximum permeability are all increased with the decrease of temperature. The coercive force shows the increase of 25% at 4.4 K as compared with that at room temperature; and the saturation induction and the maximum permeability about 15%. The very slight decrease of electric resistivity and the increase of the coercive force with the decrease of temperature promise a high-frequency application of the wire at low temperature. These results led to the fabrication of a multivibrator-type magnetometer being able to work at low temperature below 77 K. The magnetometer has a sensitivity of about 1 mV/mG at room temperature in a magnetic field range between +1 and −1 Oe. The sensitivity change is less than 0.5% even at low temperature of 6 K, as compared with that at room temperature.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 471-473 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristics of the ac magnetic-flux penetration in a sample disk-type sintered Bi2Sr2CaCu2Ox were examined under relatively low magnetic fields at a temperature of 72 K and an ac-excitation frequency of 10 kHz. The results indicated an interesting nonlinear magnetic-flux-penetration phenomena. Increases and decreases of the ac excitation field yielded a hysteresis ac magnetic-flux penetration characteristic. The superposition of a dc bias field on the ac excitation field enhanced the ac magnetic-flux penetration. Once the ac magnetic-flux penetration was completed by the dc bias field, the ac magnetic-flux penetration was sustained, even though the dc bias field was decreased to zero, presenting evidence of a dc magnetic-flux remanence.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1309-1312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiation effects on cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures have been studied with high-frequency capacitance-voltage measurements. It was 〈m1;38p〉found that interface traps are generated at the 3C-SiC/SiO2 interface and oxide-trapped charges are built up in the oxide by 60Co gamma-ray irradiation. The generation of the interface traps and the oxide-trapped charges are affected by bias polarity applied to the gate electrode during the irradiation. Absorbed dose dependencies of their generation are discussed comparing with those of Si MOS structures.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 4903-4910 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Thermally averaged rate coefficients for vibrational energy transfer of Br2 by Ar and Br atoms are calculated by a quasiclassical Monte Carlo trajectory method. In the Br2–Br system, both the nonreactive and the reactive energy transfer rates are calculated using the potential energy surface derived from a VB-DIM method. The quantum number dependence of the transition rates is investigated over a wide range of initial vibrational levels at T=2000–3500 K. It is found that the vibrational scaling law is very much different from the predictions based on the simple first-order theories of the vibrational energy transfer. A surprisal analysis of the results shows that the surprisals depend linearly on the absolute values of the quantum number difference. The characteristics of the energy transfer in the highly excited vibrational states are discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 4911-4915 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The collision induced dissociation processes in dilute mixtures of Br2–Ar and Br2–Br are investigated. Vibrational transition rates and dissociation rates from individual vibrational levels are derived from quasiclassical Monte Carlo trajectory calculations where only vibrational nonequilibrium effects are considered. The full transition rate matrix is completed by a moment analysis of the trajectory results. From the steady state solution of vibrational-level master equations, it is found that steady state populations in excited vibrational states are largely depleted but the nonequilibrium dissociation rates are about 30%–75% less than the equilibrium rates. The low activation energy observed in the previous experiments in the dissociation process, Br2+Br→Br+Br+Br cannot be explained by the present analysis.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4540-4543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical measurements are performed near the fundamental absorption edge for single-crystal AlxGa1−x N epitaxial layers in the composition range of 0≤x≤0.4. The dependence of the energy band gap on composition is found to deviate downwards from linearity, the bowing parameter being b=1.0±0.3 eV. The origin of the large bowing is discussed in terms of the pseudopotential of Al and Ga based on the pseudopotential of the Heine–Abarenkov type. With increasing x the absorption edges broaden, which is attributed to the increase of the compositional nonuniformity.
    Type of Medium: Electronic Resource
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