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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have quantitatively analyzed the signal and noise properties of perpendicular media from magnetic force microscopy images of written transitions. Four sets of Pt/CoCrTa multilayer thin films were prepared under different sputtering conditions to yield virgin media domain sizes ranging from 50 to 5000 nm. The magnetic recording transitions on each disk were written in the frequency range from 2 to 30 MHz, which corresponds to recording densities from 20 to 300 kfci. We performed Fourier analysis on the written and unwritten areas of the media to obtain signal and noise spectra. The media noise and signal-to-noise ratios from these spectra are comparable with those from recording head read-back spectra. These spectra are indicative of the exchange coupling existing in the films and correlate with the synthesis conditions for the various media. By analyzing the unwritten areas in the sample disks, we also obtained the average virgin domain sizes for these four kinds of disks.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6749-6753 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodic layer-by-layer dielectric structures with full three-dimensional photonic band gaps have been designed and fabricated. In contrast to previous layer-by-layer structures the rods in each successive layer are at an angle of 70.5° to each other, achieved by etching both sides of a silicon wafer. Photonic band-structure calculations are utilized to optimize the photonic band gap by varying the structural geometry. The structure has been fabricated by double etching Si wafers producing millimeter wave photonic band gaps between 300 and 500 GHz, in excellent agreement with band calculations. Overetching this structure produces a multiply connected geometry and increases both the size and frequency of the photonic band gap, in very good agreement with experimental measurements. This new robust double-etched structure doubles the frequency possible from a single Si wafer, and can be scaled to produced band gaps at higher frequencies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1969-1971 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used laser-micromachined alumina substrates to build a three-dimensional photonic band-gap crystal. The rod-based structure has a three-dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter-wave cavity structures. The resulting quality (Q) factors of the millimeter-wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3399-3401 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic band gap crystals have been used as a perfectly reflecting substrate for planar dipole antennas in the 12–15 GHz regime. The position, orientation, and driving frequency of the dipole antenna on the photonic band gap crystal surface, have been optimized for antenna performance and directionality. Virtually no radiated power is lost to the photonic crystal resulting in gains and radiation efficiencies larger than antennas on other conventional dielectric substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4091-4095 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metallic photonic band gap crystal with different defect structures is fabricated. The structure is designed and built to operate in the 8–26 GHz frequency range. Defects with sharp peaks in the transmission are created by removing portions of the metallic rods in a single defect layer. A high quality factor (Q) for the defect state is obtained by larger filling ratios and spatial separations between the unit cells. An optimized value of Q≥300 is found for three unit cell metallic photonic band gap structure. The experimental observations agree very well with theoretical calculations using the transfer matrix method. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7183-7185 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using a well-tested tight-binding potential, we have studied all twenty-four isolated-pentagon isomers of the C84 fullerene. Unlike C76, the helical D2 isomer of C84 is energetically very unfavorable. Two isomers which have D2 and D2d symmetries are found to be much more stable than the rest. The energies of these two isomers are so close that they may coexist in synthesis.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 3095-3102 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Combining an efficient simulated annealing scheme for generating closed, hollow, spheroidal cage structures with a tight-binding molecular-dynamics method for energy optimization, the ground-state structure of every even-numbered carbon fullerene from C72 to C102 is determined. As a general trend, most ground-state structures of the large fullerenes have relatively low symmetries. In many cases, several isomers of a fullerene are found to have competitively low energies, which suggests that a mixture of these isomers can be observed in experimental prepared samples.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 227-231 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 〈111〉 and 〈100〉 Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed. off
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 232-236 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 〈100〉 and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and 15N(p,α)12C or 18O(p,α)15N nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting "snow-plowing'' effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species, when the silicide front reaches the nitrogen-rich region.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3772-3774 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a newly developed potentiostatic etching technique, the microstructural evolution of an SmTM7.3 (TM=Co/Fe/Cu/Zr) alloy during different stages of heat treatment has been easily and successfully observed under a conventional scanning electron microscope (SEM). Specimens up to several centimeters were examined, with their features being statistically measured. It is found that the cell structure has been well developed with a median size of 110 nm after aging 2 h at 1123 K, while the intrinsic coercivity (iHc) was as low as 2 kOe. The cell size grows slowly during subsequent heat treatment to a median size of 220 nm after the whole treatment. For aging at 1123 K for 4 h, iHc value is around 4 kOe, and the platelet phase appears. After aging at 1123 K for 8 h, a large zonal phase and grain boundary phase are visible. It is thus believed that the zonal phase appears after aging for a time period between 4 and 8 h, corresponding to the iHc of 600 kA/m (7.5 kOe). No new microconstituent appears after the isothermal aging for more than 8 h, however growth proceeds. After the whole heat treatment cycle, iHc is much greater than 2400 kA/m (30 kOe), with the zonal phase ranging in size from 300 to 900 nm (in width, averaged 400 nm), 1 to 5 μm in length (averaged 3.6 μm), and 1 to 6 μm in separation (averaged 3.5 μm). The zonal and the grain boundary phases are thus concluded to be the dominating structure for the extremely high coercivity of this alloy. A model is proposed to explain the etching sequence of the microconstituents during the potentiostatic etching, and is successful to explain the resultant microstructure.
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