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  • 1
    Electronic Resource
    Electronic Resource
    Equilibrium Shape of Internal Cavities in Ruby and the Effect of Surface Energy Anisotropy on the Equilibrium Shape (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Cavities formed in ruby (99.46Al2O3·0.54Cr2O3) by the healing and annealing of indentation cracks at 1600°C are more equiaxed than similar cavities in sapphire. Surface energies for the observed facet planes (R, S, and A) relative to the surface energy of the basal plane, C, were γA/C= 1.00 ± 0.03, γR/C= 1.05 ± 0.07, and γS/C= 1.02 ± 0.04, with the uncertainty representing 95% confidence limits. Thus, the surface energies of all observed facets were statistically indistinguishable. Unlike sapphire, P-plane facets were not observed. The substantial rounding of the cavities in ruby indicated that portions of the Wulff shape were above the roughening transition temperature. Thus, even though Cr2O3 and Al2O3 form ideal solutions, Cr3+ ions are sufficiently surface active to modify the relative free energy of the surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00362.x
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  • 2
    Electronic Resource
    Electronic Resource
    Equilibrium Shape of Internal Cavities in Sapphire (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The equilibrium shape of internal cavities in sapphire was determined through the study of submicrometer internal cavities in single crystals. Cavities formed from indentation cracks during annealing at 1600°C. Equilibrium could be reached only for cavities that were smaller than is approximately100 nm. Excessive times were required to achieve equilibrium for cavities larger than is approximately 1μm. Five equilibrium facet planes were observed to bound the cavities: the basal (C) {0001}, rhombohedral (R) {1¯012}, prismatic (A) {12¯10}, pyramidal (P) {112¯3}, and structural rhombohedral (S) {101¯1}. The surface energies for these planes relative to the surface energy of the basal plane were γR = 1.05, γA = 1.12, γP = 1.06, γS = 1.07. These energies were compared with the most recent theoretical calculations of the surface energy of sapphire. The comparison was not within experimental scatter for any of the surfaces, with the measured relative surface energies being lower than the calculated energies. Although the prismatic (M) {101¯0} planes are predicted to be a low-energy surface, facets of this orientation were not observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02791.x
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of Grain Size on the Tensile Creep Behavior of Ytterbium-Containing Silicon Nitride (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of grain size on the tensile creep of silicon nitride was investigated on two materials, one containing 5% by volume Yb2O3, the other containing 5% by volume Yb2O3 and 0.5% by mass Al2O3. Annealing of the Al2O3-free silicon nitride for a longer period during processing increased the grain size by a factor of 2. This increase did not affect the tensile creep rate; the grain size exponent of the creep rate differed little from zero, p=−0.20 ± 1.37 (95% confidence level). This finding supports the more recent theories of tensile creep for which p= 0 or −1 and rejects the more classical theory of solution-precipitation. In compression, a more limited data set showed p=−1.89 ± 1.72 (95% confidence level). In contrast to the Al2O3-free material, a longer term anneal of the Al2O3-containing material during processing did not increase its grain size. Despite this, the longer-annealed Al2O3-containing material crept 10 to 100 times slower than the short-annealed material. The enhancement of creep resistance may be a consequence of SiAlON formation during the additional annealing, which reduces the Al content in the amorphous phase and increases its viscosity. Such changes in chemical composition of the grain boundaries are more effective in controlling tensile creep rate than is the grain size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00421.x
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  • 4
    Electronic Resource
    Electronic Resource
    Tensile Creep and Rupture of Silicon Nitride (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We have characterized the tensile creep, rupture lifetime, and cavitation behavior of a commercial, gas-pressure-sintered silicon nitride in the temperature range 1150° to 1400°C and stress range 70 to 400 MPa. Individual creep curves generally show primary, secondary, and tertiary creep. The majority of the primary creep is not recoverable. The best representation of the data is one where the creep rate depends exponentially on stress, rather than on the traditional power law. This representation also removes the need to break the data into high and low stress regimes. Cavitation of the interstitial silicate phase accompanies creep under all conditions, and accounts for nearly all of the measured strain. These observations are consistent with a model where creep proceeds by the redistribution of silicate phase from cavitating interstitial pockets, accommodated by grain-boundary sliding of silicon nitride.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb01901.x
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  • 5
    Electronic Resource
    Electronic Resource
    Structure of Sapphire Bicrystal Boundaries Produced by Liquid-Phase Sintering (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The structure and composition of sapphire bicrystal boundaries produced by liquid-phase sintering depended on the crystallographic misorientation of the crystals across the boundary and on the orientation of the boundary. Basal twist boundaries of 15° or 30° were not wetted by glass, but contained significant amounts of Ca and Si at the boundary. For tilt boundaries of 7° or 12°, the glass wetted segments of boundaries that contained the basal plane of either crystal. Boundary segments with orientations of 40° or more from the basal plane, however, were dewetted (i.e., “dry”). Boundary segments oriented less than ∼40° from the basal orientation were partially wetted, consisting of segments of wetted and dry grain boundaries. For the 12° tilt boundary, Ca and Si could be detected on portions of the boundary that contained no glass. For bicrystal boundaries having tilts of ≤4°, dewetting occurred for all observed boundary orientations. Basal-oriented segments in these small angle tilt boundaries contained noticeable concentrations of adsorbed Ca and Si, while nonbasal segments were apparently free of Ca and Si. Most results could be explained based on a combined Wulff plot construction, which predicts partially wetted grain boundaries and “missing” angles for unwetted grain boundaries. Results that could not be explained by the construction included growth step ledges bounded by nonequilibrium facet planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03348.x
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