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  • 1
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of grain size on the tensile creep of silicon nitride was investigated on two materials, one containing 5% by volume Yb2O3, the other containing 5% by volume Yb2O3 and 0.5% by mass Al2O3. Annealing of the Al2O3-free silicon nitride for a longer period during processing increased the grain size by a factor of 2. This increase did not affect the tensile creep rate; the grain size exponent of the creep rate differed little from zero, p=−0.20 ± 1.37 (95% confidence level). This finding supports the more recent theories of tensile creep for which p= 0 or −1 and rejects the more classical theory of solution-precipitation. In compression, a more limited data set showed p=−1.89 ± 1.72 (95% confidence level). In contrast to the Al2O3-free material, a longer term anneal of the Al2O3-containing material during processing did not increase its grain size. Despite this, the longer-annealed Al2O3-containing material crept 10 to 100 times slower than the short-annealed material. The enhancement of creep resistance may be a consequence of SiAlON formation during the additional annealing, which reduces the Al content in the amorphous phase and increases its viscosity. Such changes in chemical composition of the grain boundaries are more effective in controlling tensile creep rate than is the grain size.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We have characterized the tensile creep, rupture lifetime, and cavitation behavior of a commercial, gas-pressure-sintered silicon nitride in the temperature range 1150° to 1400°C and stress range 70 to 400 MPa. Individual creep curves generally show primary, secondary, and tertiary creep. The majority of the primary creep is not recoverable. The best representation of the data is one where the creep rate depends exponentially on stress, rather than on the traditional power law. This representation also removes the need to break the data into high and low stress regimes. Cavitation of the interstitial silicate phase accompanies creep under all conditions, and accounts for nearly all of the measured strain. These observations are consistent with a model where creep proceeds by the redistribution of silicate phase from cavitating interstitial pockets, accommodated by grain-boundary sliding of silicon nitride.
    Type of Medium: Electronic Resource
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