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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of rapid thermal annealing of As+-implanted Si (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2174-2179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing of Si after implantation with 60-keV 75As+ ions was studied using Raman scattering. Spectra were measured at different stages of annealing. It was found that the as-implanted amorphous phase was first transformed into the higher-order amorphous phase before the transformation into the crystalline phase. Regrowth of the crystalline phase occurred only from the substrate side, and no polycrystalline regions could be detected at the intermediate stages of annealing. Electrical activation of the implanted As dopant proceeded simultaneously with crystal regrowth, and complete activation coincided with the disappearance of the amorphous phase. Changes in the Raman spectra of the implanted and annealed crystalline layer caused by the contribution of free electrons were found, allowing the concentration of activated free carriers to be determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335983
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the electrical resistivity of reactively sputtered TiN films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4462-4467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity of reactively sputtered TiN films was measured as a function of film thickness. The effect of directionality of the sputtered atoms, substrate temperature, bias voltage, deposition rate, and film morphology on the electron conductivity in TiN films was studied. The combination of rapid deposition rate and high substrate temperature with bias-collimated sputtering results in TiN films with the lowest resistivity, 45 μΩ cm, the largest temperature coefficient of resistance, 1355 ppm, and the highest superconducting transition temperature, 5.04 K. These films are characterized by small grains with mixed 〈111(approximately-greater-than) and 〈200(approximately-greater-than) orientation and reduced electron scattering with an estimated electron mean-free path of 96 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352785
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  • 3
    Electronic Resource
    Electronic Resource
    Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1712-1717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance-excited Ar plasma completely removes CFx residue on Si resulting in a clean surface that is free of native Si oxide. In situ x-ray photoelectron spectroscopy verifies the absence of C and F on the surface, and the presence of what is thought to be a small amount of adsorbed or interstitially implanted O. Mechanistically, the Ar ion bombardment affects a nearly instantaneous ablation of F from the CFx surface followed in succession by a low average energy (100 eV) sputtering of the C-rich remnant, the native Si oxide, and the Si substrate. The etching rate of thick CFx residue is approximately 15 nm/min without any heat applied to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349541
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  • 4
    Electronic Resource
    Electronic Resource
    Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometry (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1001-1009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon surfaces are cleaned in an electron cyclotron resonance excited hydrogen plasma and characterized by in situ x-ray photoelectron spectroscopy and in situ static secondary ion-mass spectrometry. Emission spectroscopy and actinometry are used to characterize the hydrogen plasma. Exposure to the plasma for 3 to 4 minutes without applying heat or bias to the substrate completely removes the native silicon oxide resulting in a hydrogen terminated surface that is resistant to reoxidation. Adventitious hydrocarbon, when present on the surface, is also completely removed by the plasma. A shift in the isotope ratios of silicon suggests that a clean 〈100〉 silicon surface is monohydride terminated, whereas a 〈111〉 silicon surface appears largely dihydride terminated. A depth profile of the silicon isotope ratios shows a temporal instability, which with the assignment of a H 1s state in the valence-band spectra provides evidence that the hydrogen is concentrated at the surface and has not diffused deep into the silicon lattice. The oxygen removal rate has the following characteristics: two distinct microwave operating regimes separated by a discontinuity in power around 600 W; a singularity corresponding to rapid oxygen removal at 2.5 mTorr; an abrupt and near monotonic decrease in oxygen removal above 14 mTorr; and an invariance of the removal rate to ion-energy from about 10 to 100 eV. The density of hydrogen excited species and the ground state hydrogen atom density are correlated with the oxygen removal rate under all conditions except high pressure, where the density of hydrogen ions is low. This suggests an ion-induced etching mechanism whereby the native silicon oxide removal is enhanced with low-energy hydrogen ion bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351373
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoemission spectra of reactively sputtered TiN (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6079-6085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectra of reactively sputtered TiN1.0 films are recorded without interference from adsorbed contaminants or ion sputter cleaning damage. In this way, the transition from hcp TiN0.3 to fcc TiN1.0 is characterized by a discontinuity in film stoichiometry, Ti 2p splitting energy, and Ti 2p3/2 binding energy as a function of the Ar/N2 ratio during sputtering. The line shapes of the N 1s and 2s transitions experience only an asymmetric broadening on forming fcc TiN. The core-level N 1s transition of fcc TiN is modeled as two components peaks with binding energies at 396.8 and 396.0 eV. Similarly, the valence band N 2s transition has corresponding component peaks at 16.8 and 16.2 eV. These high and low binding energy pairs are interpreted as on-site Ns and interstitial site Ni populations of nitrogen in a fcc TiN lattice, respectively. The ratio of N/Ti is 1.0 and the Ns/Ni ratio is approximately 6. Both ratios are independent of the composition of the sputtering gas mixture and the substrate temperature once fcc TiN is formed. The core level Ti 2p transition in fcc TiN is characteristic of a single Ti3+ oxidation state with a line shape that is also insensitive to the gas composition and the substrate temperature during sputtering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350465
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  • 6
    Electronic Resource
    Electronic Resource
    Variation of composition of sputtered TiN films as a function of target nitridation, thermal anneal, and substrate topography (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 220-222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition of reactively sputtered TiN was measured with RBS and AES for aspect ratio 2 topography as a function of Ti target nitridation. The bottom of the aspect ratio 2 topography was nitrogen depleted (Ti:N=1.78:1) as compared to the field (Ti:N=1.01:1) for films sputtered with a non-nitrided target at 20 kW and 400 °C. No such depletion effect was observed for TiN films sputtered with a nitrided target. Thermal annealing of the depleted TiN films at 450 °C in N2 restored the composition to near-stoichiometric. SIMBAD simulation with a saturation-dependent nitrogen sticking coefficient was used to understand the nature of the nitrogen depletion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114673
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  • 7
    Electronic Resource
    Electronic Resource
    Hf(SexTe1-x)2: deviation from Vegard's law in mixed systems (1981)
    s.l. : American Chemical Society
    Inorganic chemistry 20 (1981), S. 3655-3659 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50225a014
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  • 8
    Electronic Resource
    Electronic Resource
    The use of semiconductor processes for the design and characterization of a rapid thermal processor
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 37-38 (1989), S. 818-822 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(89)90305-4
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  • 9
    Electronic Resource
    Electronic Resource
    RTP temperature uniformity mapping
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 55 (1991), S. 269-274 
    Details
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-583X(91)96176-L
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  • 10
    Electronic Resource
    Electronic Resource
    Solid state studies of HfSe"2"-"xTe"x and HfTe"2"-"x
    Amsterdam : Elsevier
    Physica B+C 99 (1980), S. 215-218 
    Details
    ISSN: 0378-4363
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0378-4363(80)90235-1
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