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  • 1
    Digitale Medien
    Digitale Medien
    Low energy ion etching of aluminum oxide films and native aluminum oxide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5467-5470 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Aluminum oxide films were etched using low energy argon ions generated by a microwave electron cyclotron resonance (ECR) source argon plasma. The argon ion energies were controlled by biasing substrates placed on a 13.56 MHz capacitively coupled electrode. Reactively sputtered aluminum oxide films were used to study the relationship between the dc bias applied to these substrates and the etch rate of their films. In situ x-ray photoemission spectra of the Al 2p and O 1s transitions showed that the ECR plasma was effective in completely removing native aluminum oxide and adventitious hydrocarbon in 1 min at ion energies as low as 100 eV. This preclean technology did not change the dielectric breakdown distribution of antenna structures with 12-nm-thick gate oxide capacitors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351990
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  • 2
    Digitale Medien
    Digitale Medien
    Removal of native silicon oxide with low-energy argon ions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3970-3972 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Electron cyclotron resonance argon plasmas have been used to clean native silicon oxide at low (≈100 eV) ion energies. In situ x-ray photoelectron spectroscopy (XPS) allowed us to evaluate the effectiveness of this process by studying the Si 2p and O 1s photoemission spectra. Results indicate complete and rapid removal of chemically bound oxygen to silicon and the presence of small levels of adsorbed or interstitially implanted oxygen. Implanted argon was detected by XPS; however, the concentration appears to be greatly reduced by operating under low substrate bias conditions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349160
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  • 3
    Digitale Medien
    Digitale Medien
    X-ray photoemission analysis and electrical contact properties of NF3 plasma cleaned Si surfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3718-3725 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The removal of native silicon oxide on 〈100(approximately-greater-than) silicon with an electron cyclotron resonance (ECR) excited NF3 plasma is demonstrated. In situ x-ray photoemission spectroscopy verifies removal of the oxide and shows that a residue remains on the surface after exposure to the plasma. The residue is about 1.2 nm thick with the approximate formula Si6F8ON2 when analyzed with a uniform overlayer model. X-ray photoemission spectra of the residue show fluorine and oxygen in at least two different bonding states and a unique nitrogen having a diamagnetic bond. Chemical bonding in the residue is ascribed to Fx-Si, Fx-Si-O, Si-O-Si, and N2-O-Si species, where x=1, 2, and 3. A distinct high-energy peak is identified in the quasicore level F 2s transition that is attributed to a small amount of interstitial fluorine having diffused into the silicon lattice. The residue is stable at room temperature in both vacuum and under hydrogen, but when exposed to room ambient, it and the substrate appear to oxidize accounting for a loss of both fluorine and nitrogen. Heating the residue to 640 °C in vacuum causes a significant loss of fluorine and nitrogen also. A possible mechanism accounting for the formation of the residue is proposed assuming that there is a difference in the decay time of the atomic species in the plasma. The ECR cleaning process is integrated into a sputtered TiN/Ti metallization sequence to show the effect of in situ chemical and physical plasma cleaning methods on the electrical contact properties of devices with submicron dimensions and high-aspect ratios. The specific contact resistance of Ti to n+-polycrystalline Si and to TiSi2/n+-, p+-〈100(approximately-greater-than) Si is found comparable to that achieved with an ECR excited Ar plasma cleaning where a surface residue is not produced.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352320
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  • 4
    Digitale Medien
    Digitale Medien
    Plasma cleaned Si analyzed in situ by x-ray photoelectron spectroscopy, secondary ion mass spectrometry, and actinometry (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1001-1009 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Silicon surfaces are cleaned in an electron cyclotron resonance excited hydrogen plasma and characterized by in situ x-ray photoelectron spectroscopy and in situ static secondary ion-mass spectrometry. Emission spectroscopy and actinometry are used to characterize the hydrogen plasma. Exposure to the plasma for 3 to 4 minutes without applying heat or bias to the substrate completely removes the native silicon oxide resulting in a hydrogen terminated surface that is resistant to reoxidation. Adventitious hydrocarbon, when present on the surface, is also completely removed by the plasma. A shift in the isotope ratios of silicon suggests that a clean 〈100〉 silicon surface is monohydride terminated, whereas a 〈111〉 silicon surface appears largely dihydride terminated. A depth profile of the silicon isotope ratios shows a temporal instability, which with the assignment of a H 1s state in the valence-band spectra provides evidence that the hydrogen is concentrated at the surface and has not diffused deep into the silicon lattice. The oxygen removal rate has the following characteristics: two distinct microwave operating regimes separated by a discontinuity in power around 600 W; a singularity corresponding to rapid oxygen removal at 2.5 mTorr; an abrupt and near monotonic decrease in oxygen removal above 14 mTorr; and an invariance of the removal rate to ion-energy from about 10 to 100 eV. The density of hydrogen excited species and the ground state hydrogen atom density are correlated with the oxygen removal rate under all conditions except high pressure, where the density of hydrogen ions is low. This suggests an ion-induced etching mechanism whereby the native silicon oxide removal is enhanced with low-energy hydrogen ion bombardment.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351373
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  • 5
    Digitale Medien
    Digitale Medien
    Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1712-1717 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An electron cyclotron resonance-excited Ar plasma completely removes CFx residue on Si resulting in a clean surface that is free of native Si oxide. In situ x-ray photoelectron spectroscopy verifies the absence of C and F on the surface, and the presence of what is thought to be a small amount of adsorbed or interstitially implanted O. Mechanistically, the Ar ion bombardment affects a nearly instantaneous ablation of F from the CFx surface followed in succession by a low average energy (100 eV) sputtering of the C-rich remnant, the native Si oxide, and the Si substrate. The etching rate of thick CFx residue is approximately 15 nm/min without any heat applied to the substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349541
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  • 6
    Digitale Medien
    Digitale Medien
    Etching of SiO2 in an electron cyclotron resonance argon plasma (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Etching of SiO2 with low-energy Ar ions has been studied in an electron cyclotron resonance (ECR) based etching system. Ion energies were controlled by a capacitively coupled 13.56 MHz bias of the substrate. Etch rates of over 100 A(ring)/min have been achieved at ion energies below 100 V. The variation in etch rate has been studied as a function of ECR power, self-induced bias, and position of the wafer relative to the ECR source. This low-energy process can be utilized for cleaning of semiconductor surfaces prior to chemical vapor deposition or metallization processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.103198
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  • 7
    Digitale Medien
    Digitale Medien
    Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4 (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The use of a reactive ion etch process with high selectivity for etching GaAs layers and stopping on underlying AlGaAs layers is reported. A key feature is the high degree of control that can be maintained over the GaAs-to-AlGaAs selectivity by changing the SF6/SiCl4 ratio while keeping other etch parameters such as pressure, dc bias, or power constant. Values of the GaAs-to-AlGaAs selectivity can be varied from 1 to 500. Diluent gases such as helium can be added to reduce the etch rate, which is important to avoid damage to sensitive device structures and to the overhang profile of resist materials used for liftoff metallization. The application of this etch process for high electron mobility transistor fabrication is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98747
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  • 8
    Digitale Medien
    Digitale Medien
    Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reactive ion etching is important for III-V device fabrication. Commonly encountered applications include the need to remove an epitaxial layer selectively from underlying layers and the need for definition of mesas and other structures with carefully controlled dimensions. We present results showing the use of very thin Al0.9Ga0.1As and In0.2Ga0.8As stop-etch layers, which when used in conjunction with a particular etch chemistry can provide highly selective removal of epitaxial layers in GaAs-based III-V compound semiconductors. In addition, we report the selective removal of an Al0.3Ga0.7As layer from underlying GaAs by the use of a thin In0.2Ga0.8As interlayer.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98947
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  • 9
    Digitale Medien
    Digitale Medien
    Thermal nitridation of silicon in a cluster tool (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 341-343 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An integrated cluster tool process is described whereby stoichiometric Si3N4 films with less than 0.01 at % oxygen, hydrogen, and carbon are grown on 〈111〉 Si. The ultrahigh film purity is verified in situ with x-ray photoelectron spectroscopy and static secondary ion-mass spectrometry depth profiles. The two-step process consists of cleaning the surface in an electron cyclotron resonance excited H2 plasma, and passing in vacuum to a second chamber where it is exposed to NH3 for 2 min at 1070 °C to promote nitridation. The films are approximately 5 nm thick with a refractive index of 2.01 at 633 nm. They are resistant to a dry O2 ambient for at least 6 h at 1050 °C. The average breakdown field of Al/Si3N4/Si capacitors is around 9 MV/cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.106651
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  • 10
    Digitale Medien
    Digitale Medien
    Absorption measurements of H"2O at high temperatures using a CO laser
    Amsterdam : Elsevier
    Journal of Quantitative Spectroscopy and Radiative Transfer 30 (1983), S. 1-7 
    Details
    ISSN: 0022-4073
    Quelle: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-4073(83)90066-3
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