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  • 1
    Electronic Resource
    Electronic Resource
    Stable-mode operation of leaky-mode diode laser arrays at high pulsed and cw currents (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 452-454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report stable pulsed and cw fundamental mode operation for ten-stripe leaky-mode diode laser arrays which use the confinement factor effect for mode control. Lasing occurs in the fundamental mode for pulsed operation (≤1 μs) up to 10× threshold and for cw operation up to 3.4× threshold. For cw operation, a thermal decoupling of the outer array stripes broadens the far field slightly but does not affect the lasing mode order. Our two-dimensional model of these devices reproduces this decoupling of the outer array stripes when thermal effects are included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104604
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Near-diffraction-limited angle-switchable output beam from a broad-area diode laser with an intracavity spatial phase controller (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The production of a near-diffraction-limited single-lobed angle-switchable output beam from a broad-area diode laser with an intracavity spatial phase controller is demonstrated. This 100-μm-wide broad-area laser produces a 0.8° full width at half maximum output beam at single-facet pulsed powers of (approximately-greater-than)300 mW. The spatial phase controller operates in two distinct modes (thermal and gain), providing beam scanning over 1.4° and beam switching of 8°. The phase controller also permits a dynamic study of the effect of wavefront tilt on device coupling and phasing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104737
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Intracavity absorption with external fluorescence measurement for detection of radioiodine isotopes (1979)
    s.l. : American Chemical Society
    Analytical chemistry 51 (1979), S. 930-932 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50043a034
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Integrated injection-locked high-power cw diode laser arrays (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 531-533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first integrated injection-locked high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This device emits a near-diffraction-limited (0.5° full width at half maximum) single-lobed far-field emission beam at single-facet powers up to 125 mW. Also, by current tuning the emission wavelength of the master laser, we observe steering of the single-lobed emission over an angular range of 0.50° at a rate of −1.2×10−2 deg/mA. Our work demonstrates the feasibility of incorporating active optical injection and control in the structure of high-power diode laser devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101845
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Mode control in broad-area diode lasers by thermally induced lateral index tailoring (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 260-262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Broad-area diode lasers that emit in the fundamental mode under short-pulse excitation are observed to evolve into higher order lateral modes with increasing pulse width. Our data provide convincing evidence that the lateral refractive index profile arising from junction heating plays a dominant role in determining the lateral emission modes in these devices for long-pulse and cw operation. Furthermore, we show that an external focused laser heat source can be used to modify the lateral index profile in a broad-area laser and thus control the lasing mode. In particular, we demonstrate that (approximately-less-than)50 mW of absorbed heating power is sufficient to counteract the effects of internal junction heating and restore fundamental mode operation at cw injection currents as high as 1.5 Ithreshold. Our results suggest that fundamental mode operation of broad-area devices at high-power levels might be realized by incorporating a tailored lateral index profile to compensate for internal junction heating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99487
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  • 6
    Electronic Resource
    Electronic Resource
    Injection-locking characteristics of gain-guided diode laser arrays with an "on-chip'' master laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1521-1523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the injection-locking characteristics of a high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This integrated injection-locked array emits a near-diffraction-limited single-lobed output beam at cw power levels up to 220 mW/facet. By controlling the current to the master laser, the single-lobed output beam can be electronically steered over a far-field angle of 〉1.7°. We also report preliminary studies of the coupling interaction in these integrated devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103162
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of thermal effects on the eigenmodes of gain-guided diode laser arrays (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1697-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the inclusion of junction-heating effects in the numerical modeling of a gain-guided diode laser array produces significant changes in the mode characteristics of such devices. This is evidenced as alterations in the near- and far-field emission patterns and modal gains of the high-order array eigenmodes. Our experimental measurements of the emission patterns from free-running and injection-seeded gain-guided diode laser arrays show very good agreement with the results of our model and illustrate the influence of these thermal effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338065
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Unidirectional semiconductor ring lasers with racetrack cavities (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2457-2459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of racetrack-cavity semiconductor ring lasers that operate unidirectionally by means of an active crossover waveguide. These racetrack-cavity lasers show improved performance over previous circular-cavity unidirectional ring lasers with continuous-wave single-frequency output powers of ≥10 mW, and with up to 99% of the lasing output emitted from the preferred ring direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110474
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  • 9
    Electronic Resource
    Electronic Resource
    Passive mode locking of monolithic semiconductor ring lasers at 86 GHz (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1598-1600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the development of monolithic passively mode-locked semiconductor ring lasers. These direct-waveguide-coupled lasers with a ring radius of 150 μm emit a continuous train of 1.3 ps transform-limited lasing pulses at 86 GHz repetition rate with a peak power of 10 mW/pulse at the laser output facet. We also observe, under certain conditions, the presence of a second pulse in the ring cavity doubling the pulse repetition rate to 172 GHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110808
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Effect of the Y-junction output coupler on the lasing threshold of semiconductor ring lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1325-1327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first measurements of the effect of a Y-junction output coupler on the continuous-wave (cw) lasing threshold of rib-waveguide semiconductor ring lasers. We show that the Y-junction induced loss in this type of ring diode laser depends on the ring radius (r), and increases the lasing threshold current density substantially for devices with r〈200 μm. For our devices with radii of 50–100 μm, the Y-junction loss term is shown to be the dominant factor affecting the cw lasing threshold. We also report the first measurements of the dependence of the cw lasing threshold on the width (w) of the Y-junction output coupler, and show that the threshold current density increases linearly for 0≤w≤9 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109719
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    Paper (German National Licenses)
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