ISSN:
1432-0630
Keywords:
81.15Gh
;
52.90+z
;
68.55+b
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Copper-oxide films are deposited by plasma-enhanced CVD using copper acetylacetonate as a precursor. The influence of various experimental parameters on deposition rate, film composition and resistivity have been studied. The substrate temperature and the bias are the parameters which affect these properties the most. An increase of the substrate temperature changes the phases of the deposit from Cu2O-CuO over Cu2O to Cu. At temperatures ≧500° C the deposition rates are high but the films consist mainly of metallic Cu. A negative bias enhances the deposition rate only slightly but has a strong effect on the film composition and can completely balance the oxygen deficiency. At a bias of −120 V the films consist of pure CuO even at temperatures ≧500° C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324731
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