ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Preliminary results of a systematic theoretical study on the reactions of NO with a model4H-SiC/SiO2 interface are presented. We show, that nitridation is a complex process, in which thebalance between various mechanisms depends on doping and temperature. For weakly doped(1015-16 cm-3) n-type SiC, the crucial effect is an additional oxidation without creation of excess carbonat the interface
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.541.pdf
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