Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 25-27
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Plasma sheath electric fields, hence ion motions, deviate near patterned substrate features. This results in a basic directionality limit to ion-assisted processes. Ion deviation is here derived analytically for dc sheaths, and expressed as an "ion isotropy ratio,'' the fraction of ions bombarding a trench sidewall instead of its bottom. This ratio is equal to (trench depth/ion acceleration distance) multiplied by a factor of about 0.5. Thus, ion deviation is especially significant for discharges with small sheath heights and yields a fundamental tradeoff between ion directionality, ion energy, and permissible ion current.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108807
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