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  • 1
    Electronic Resource
    Electronic Resource
    Recombination rate saturation mechanisms at oxidized surfaces of high-efficiency silicon solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4740-4754 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shoulders have been observed in the measured semilogarithmic current-voltage (I–V) characteristics of high-efficiency passivated emitter and rear locally diffused silicon (Si) solar cells. An improved understanding is given of the mechanism proposed to cause these nonideal I–V curves. It is shown that this mechanism is due to the electrostatic behavior of free carriers at the Si/SiO2 interface of oxidized Si devices in which the Si adjacent to the oxide is depleted (or in some cases, inverted) at equilibrium, and results in saturation of the surface recombination rate. Two-dimensional numerical computer simulations are used to investigate this mechanism and its effect on cell performance. In addition, the simulations provide a means of estimating the extent to which lateral conduction in the rear surface channel also contributes to the observed recombination saturation in these cells. It is shown that ohmic limitation of lateral conduction occurs, however, the lateral current flows are negligible in comparison to the recombination currents due to the former mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359821
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  • 2
    Electronic Resource
    Electronic Resource
    Plasma-grooved, buried contact silicon solar cells (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4135-4136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solar cells with less than 1% front-surface metal shading loss have been made with a deep-grooving hollow cathode dry etching process. Compared with standard laser-grooved cells, a 4% relative increase in short-circuit current density has been demonstrated. Open-circuit voltages of over 640 mV (air mass 1.5, 25 °C), a fill factor of almost 79%, and the application of an antireflection coating have resulted in a one-sun efficiency of 19.2%. This is one of the highest efficiencies yet reported for a cleaved 4 cm2 silicon solar cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348429
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  • 3
    Electronic Resource
    Electronic Resource
    717-mV open-circuit voltage silicon solar cells using hole-constrained surface passivation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 199-201 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A virtual saturation of the supply of holes leading to an injection level dependent reduction in surface recombination velocity has been shown to be responsible for the improved performance of recent high efficiency silicon solar cells. By fabricating test cells taking advantage of this and other recombination reduction mechanisms, improved open-circuit voltages of 717 mV have been independently confirmed for experimental silicon cells. These voltages correspond to saturation current densities of 25 fA/cm2 at 25 °C, also the lowest demonstrated for a silicon junction device. Further improvement in both voltage and cell efficiency is expected to result from this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111503
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    Paper (German National Licenses)
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