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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of epitaxial lithium tantalate thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3420-3425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lithium tantalate thin films were grown on prismatic sapphire substrates by a specially designed ultrasonic nozzle assisted liquid injection metalorganic chemical vapor deposition system. The films were characterized by x-ray diffraction and transmission electron microscopy. They contained two crystallographic iso-variants. The relative volume of two variants in the as-grown films was nearly equal. The optical loss in the films, measured by photographic method, was 2 dB/cm. Second harmonic properties of the films were measured in transmission. Compared to bulk single crystals, the as-grown thin film had a weak second harmonic response in the range of 1 pm/V, which was ascribed to the antiparallel domains in the films. Mathematical equations are derived to correlate this microstructure to second harmonic generation. The films were successfully poled by the application of in-plane electric field. After poling the second harmonic generation coefficient increased to 12 pm/V. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358633
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  • 2
    Electronic Resource
    Electronic Resource
    Correlation between structural and optical properties in proton-exchanged LiNbO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3083-3085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a correlation of the structural characterization of proton-exchanged LiNbO3 provided by ion beam and x-ray analysis with the optical characterization provided by refractive index and second-harmonic generation measurements. The process of proton exchange induces disorder in the crystal lattice of LiNbO3. Subsequent thermal annealing removes only partially the lattice disorder and, in particular, the near surface region of the samples generally remains highly distorted. Results of x-rays studies indicate that the proton exchange induces a strain in the lattice and thermal annealing partially recovers it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107969
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  • 3
    Electronic Resource
    Electronic Resource
    Domain inversion in LiTaO3 by electron beam (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain inversion in Z-cut LiTaO3 by injecting electrons into negative C face was observed but no domain inversion was observed on injecting electrons on positive C face. At low electron-beam currents, small multidomains are observed. At a scan rate of 2 μm/s and beam current of 100 pA, a domain width of about 6 μm was obtained. We present results of domain width and domain size variation with electron-beam scan rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107352
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  • 4
    Electronic Resource
    Electronic Resource
    MgO epitaxial thin films on (100) GaAs as a substrate for the growth of oriented PbTiO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial MgO thin films were grown on (100) GaAs substrates by reactive rf magnetron sputtering. Coupled x-ray diffraction, off-axis φ scan, and transmission electron microscopy indicated in-plane alignment of the MgO film with the GaAs substrate such that MgO[100](parallel)GaAs[100]. PbTiO3 ferroelectric thin films, grown on this MgO surface, were found to be oriented with PbTiO3{100}(parallel) MgO(001)(parallel) GaAs(001) and PbTiO3〈100〉(parallel) MgO[100](parallel) GaAs[100].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106766
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of proton exchange on the nonlinear optical properties of LiNbO3 and LiTaO3 (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of proton exchange carried out using benzoic and pyrophosphoric acid on the nonlinear optical coefficient (d) of LiNbO3 and LiTaO3 was studied using a second-harmonic generation reflectance technique. Significant degradation in the d coefficient of LiNbO3 and LiTaO3 was observed as a result of proton exchange with either benzoic or pyrophosphoric acid under the conditions studied. Some recovery only in the short time proton-exchanged sample (0.5 h at 180 °C) of LiNbO3 was observed under thermal annealing at 350 °C for 1 h. Results of in situ measurement of second-harmonic signal recovery under thermal annealing are reported. Results are also presented on theoretical and experimental variations of second-harmonic generation intensity with an incident polarization angle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108259
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction in flux divergence at vias for improved electromigration in multilayered AlCu interconnects (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2134-2136 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using of W-plug vias in AlCu interconnects is known to significantly degrade electromigration (EM) performance because W is a diffusion barrier and prevents the depleting species by EM from being replenished at the via. In the present study, we demonstrate that this problem of limited source for EM migrating species can be dramatically alleviated in a multilayered metallization of TiN/AlCu/TiN using Al-plug vias. EM lifetime improvements as large as by an order of magnitude are accomplished by reducing the flux divergence at the Al-plug via. This flux divergence is critically determined by the effective thickness of some transition metal films at the via, which include a Ti/TiN stack for the via barrier and a TiN layer of antireflection coating for the bottom level metal lead. Scanning electron microscopy failure analysis also verifies that the samples with W-plug vias have the void damages consistently located at the via. For the samples with Al-plug vias and with the flux divergence at the via being largely reduced, the void failures locate on the metal lead and no visible damage at or within the via, indicating the reduced flux divergence at the via has become smaller than those generated on the metal lead due to microstructural variations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117178
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