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  • 1
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of epitaxial lithium tantalate thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3420-3425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial lithium tantalate thin films were grown on prismatic sapphire substrates by a specially designed ultrasonic nozzle assisted liquid injection metalorganic chemical vapor deposition system. The films were characterized by x-ray diffraction and transmission electron microscopy. They contained two crystallographic iso-variants. The relative volume of two variants in the as-grown films was nearly equal. The optical loss in the films, measured by photographic method, was 2 dB/cm. Second harmonic properties of the films were measured in transmission. Compared to bulk single crystals, the as-grown thin film had a weak second harmonic response in the range of 1 pm/V, which was ascribed to the antiparallel domains in the films. Mathematical equations are derived to correlate this microstructure to second harmonic generation. The films were successfully poled by the application of in-plane electric field. After poling the second harmonic generation coefficient increased to 12 pm/V. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358633
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation Behavior of SiCN–ZrO2 Fiber Prepared from Alkoxide-Modified Silazane (2004)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 87 (2004), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The oxidation behavior of SiCN–ZrO2 fibers and SiCN at 1350°C are compared. The as-measured parabolic rate constants for the two materials are nearly the same (15–20 × 10−18 m2/s). However, after implementing a correction for the difference in the compositions, the rate constant is 13.2 × 10−18 m2/s for the fiber, and 29.4 × 10−18 m2/s for SiCN. The lower oxidation rate of the fiber is ascribed to the lower carbon content in the fiber material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.01556.x
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  • 3
    Electronic Resource
    Electronic Resource
    Integration of Ceramics Research with the Development of a Microsystem (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Rapid implementation of new materials into engineering systems may require a paradigm shift in our approach to materials research. One option is to obtain fundamental material properties from experimental systems that can also serve as devices. This concept is applied to the measurement of Young's modulus of a novel ceramic, a polymer-derived silicon carbonitride (SiCN), directly from the performance of a microelectromechanical system (MEMS) device. The device is an electrostatic actuator. The flexure resistance of the arms of the actuator is measured and analyzed for the elastic modulus of SiCN. The comparison between theory and experiment yields a value for Young's modulus in the range 130–155 GPa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03453.x
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  • 4
    Electronic Resource
    Electronic Resource
    Pyrolysis Kinetics for the Conversion of a Polymer into an Amorphous Silicon Oxycarbide Ceramic (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We present experimental and analytical results for the pyrolysis reactions underlying the conversion of a cross-linked polymer into an amorphous ceramic material. The activation energies, obtained from thermogravimetric data, and chemical analysis of the volatiles by mass spectroscopy are used to identify the reaction pathways. The reaction is determined to be first-order, which is consistent with its solid-state nature. The magnitude of the weight loss is analyzed to calculate the number of molecular sites in the polymer that participate in the reaction. The experiments were conducted on a polymer made from silsesquioxanes that convert into silicon oxycarbide ceramics on pyrolysis. The results show that 〈2.5% of the silicon atoms in the polymer are removed as volatile silanes, and less than one-half of the carbon atoms are lost as methane. These results are a first step in understanding the molecular basis for the ceramic yield, as well as the evolution of the nanostructure as the material changes from an organic into a ceramic state by reactions that can occur at 〈850°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00432.x
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  • 5
    Electronic Resource
    Electronic Resource
    Crystallization of Polymer-Derived Silicon Carbonitride at 1873 K under Nitrogen Overpressure (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The chemical stability of an amorphous silicon carbonitride ceramic, having the composition 0.57SiC·0.43Si3N4·0.49C is studied as a function of nitrogen overpressure at 1873 K. The ceramic suffers a weight loss at pN2 〈 3.5 bar (1 bar = 100 kPa), does not show a weight change from 3.5 to 11 bar, and gains weight above 11 bar. The structure of the ceramic changes with pressure: it is crystalline from 1 to 6 bar, amorphous at ∼10 bar, and is crystalline above ∼10 bar. The weight-loss transition, at 3.5 bar, is in excellent agreement with the prediction from thermodynamic analysis when the activities of carbon, SiC, and Si3N4 are set equal to those of the crystalline forms; this implies that the material crystallizes before decomposition. The amorphous to crystalline transition that occurs at ∼10 bar, and which is accompanied by weight gain, is likely to have taken place by a different mechanism. A nucleation and growth reaction with the atmospheric nitrogen is proposed as the likely mechanism. The supersaturation required to nucleate α-Si3N4 crystals is calculated to be 30 kJ/mol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00503.x
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphous Silicon Carbonitride Fibers Drawn from Alkoxide Modified Ceraset™ (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We show that the rheology of a silazane-based precursor for a silicon carbonitride ceramic can be radically altered by reacting it with an alkoxide precursor. This modified precursor can be drawn into fibers by a simple process. The fiber-friendly rheology of the modified precursor is ascribed to the creation of linear polymer chains by a reaction between silazanes and alkoxides. The ceramic fibers made by this process have excellent mechanical properties, reaching tensile strengths of 2.8 GPa. Their structure is amorphous.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03493.x
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  • 7
    Electronic Resource
    Electronic Resource
    Solid Yttria-Stabilized Zirconia Films by Pulsed Chemical Vapor Deposition from Metal-organic Precursors (2002)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A pulsed chemical vapor deposition from metal-organic precursors (MOCVD) system was used to produce solid zirconia, and yttria-stabilized zirconia (YSZ) films. A total of six candidate metal-organic precursors for zirconia and three for yttria were investigated. Three precursor solutions for YSZ proved suitable for pulsed-MOCVD processing. Layers were deposited on metal, alumina, and porous nickel cermet substrates. Under optimal deposition conditions, precursor conversion efficiency of 90% was achieved using a solution of 3.74 vol% zirconium 2-methyl-2-butoxide + 0.42% yttium methoxyethoxide in toluene. The film growth rate was 7.5 μm·h−1 at 525°C deposition temperature. Two alkoxide precursors produced YSZ layers with material costs under $0.50/(μm·cm2).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2002.tb00549.x
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  • 8
    Electronic Resource
    Electronic Resource
    A tungsten filament high temperature heater for thin film deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3958-3960 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A reliable high temperature substrate heater for thin film deposition was constructed. The heater has a modular design and is built from parts that are easy to fabricate. The heater consists of a square arrangement of four tungsten filaments in a disk-shaped molybdenum susceptor. The electrical connections are placed near the edge where they are easily accessed. A finite element analysis shows that this design produces a more uniform temperature distribution than typical radial arrangements of filaments. The excellent performance of the new heater is demonstrated by thickness variations of less than 2% in thin films of lithium tantalate films grown on a 3.75 cm diam substrate by a high vacuum metal-organic chemical vapor deposition process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147298
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  • 9
    Electronic Resource
    Electronic Resource
    Domain structure and phase transitions in epitaxial KNbO3 thin films studied by in situ second harmonic generation measurements (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1323-1325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of KNbO3 were deposited on SrTiO3 (100) substrate by laser ablation. In the orthorhombic phase, the four possible domain variants in the KNbO3 (110) film growth plane were determined to be KNbO3[11¯0](parallel)SrTiO3[001], [001¯], [010], and [01¯0] denoted as X+, X−, Y+, and Y−, respectively. Using a fundamental beam of 1064 nm transmitted normal to the film, the second harmonic generation (SHG) signal at 532 nm was measured and correlated to the area fractions AX+, AX−, AY+, and AY− of the four domain variants X+, X−, Y+, and Y−, respectively, in the growth plane of the film. At room temperature, the area fractions δAx=AX+−AX− and δAy=AY+−AY− were determined to be ∼3.3% and ∼2.2%, respectively. In-situ SHG measurements revealed the phase transitions to be 210±10 °C for orthorhombic–tetragonal and 450±10 °C for tetragonal–cubic transitions. In the tetragonal phase (between 210 °C and 450 °C) the KNbO3 〈100〉(parallel)SrTiO 3 〈100〉. The use of SHG as a sensitive, non-destructive and real-time probe of phase transitions and evolution of domains in ferroelectric thin films is demonstrated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115922
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  • 10
    Electronic Resource
    Electronic Resource
    Electric field induced domain rearrangement in potassium niobate thin films studied by in situ second harmonic generation measurements (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 865-875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a sensitive technique to study domain rearrangement in ferroelectric thin films using in situ second harmonic generation (SHG) measurements. The following film system on a MgO substrate was studied: KNbO3(110)||120 Å SrTiO3(100)||MgO(100). From x-ray diffraction, four possible domain variants in the film growth plane were determined to be KNbO3[11¯0]||SrTiO3 and MgO[001], [001¯], [010], or [01¯0] denoted as variants X+, X−, Y+ and Y−, with area fractions AX+, AX−, AY+ and AY−, respectively, in the film growth plane. The SHG signal (532 nm) from the films generated by a transmitted fundamental beam of 1064 nm was measured and theoretically correlated to the area fractions of different domain variants in the film. The magnitude and signs of net area fractions (AX+−AX−) and (AY+−AY−) were determined as a function of external field applied along the MgO〈001〉 direction in the film growth plane. No remnant poling was observed in KNbO3 films after application and removal of external fields up to 10 kV/cm at room temperature. We propose mechanisms to correlate this behavior to the pinning of domain wall motion by low angle grain boundaries in KNbO3. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364222
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