ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117247
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