ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The beam focusing behavior in a semiconductor directional coupler with saturated gain is studied as a function of the antiguidance factor, injection current density, input power, and initial beam radius. When the antiguidance factor b=2, and the injection current density J=5×10−5 A/μm2, the upper and lower limits of input power for the beam focusing effect of an injected Gaussian beam in the directional coupler structure considered in this paper to occur are 3.5 and 20 mW, respectively. Over this range of input power levels, the optically induced focusing beam radius shows a strong dependence on the antiguidance factor, injection current density, and initial beam radius. However, the input power is found to have a negligible effect on the focusing beam radius.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343249
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