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  • 1
    Electronic Resource
    Electronic Resource
    Single-electron tunneling through Si nanocrystals dispersed in phosphosilicate glass thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3199-3203 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical transport properties of extremely thin phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) a few nanometers in diameter were studied. Samples were prepared by cosputtering Si and PSG targets, and post annealing. Periodic Coulomb staircases were clearly observed in the dc current–voltage (I–V) characteristics along the vertical direction of films. Although the step structure was broadened with increasing the temperature, it remained up to 200 K. The I–V curve could be well fitted by Monte Carlo simulation with a simple double-barrier structure model. Advantages of using PSG instead of SiO2 as surrounding matrices of nc-Si to observe single-electron tunneling effects are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371189
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  • 2
    Electronic Resource
    Electronic Resource
    Hopping conduction in SiO2 films containing C, Si, and Ge clusters (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3749-3751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependence of electrical characteristics of SiO2 films doped with C, Si, and Ge were studied. The conductivity σ was found to vary with the temperature as lnσ∝T−1/4 over a wide temperature range, indicative of the conduction by the variable range hopping (VRH) mechanism. Since the previous optical studies for the same films indicate the existence of clusters in the films, it is very likely that the VRH through localized states associated with clusters dominates the conduction process, irrespective of the kind of group IV elements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115994
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    Paper (German National Licenses)
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