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  • 1
    Electronic Resource
    Electronic Resource
    Minority-electron mobility in p-type GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5197-5199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mobility of photoinduced minority electrons in molecular-beam epitaxially grown p-GaAs has been measured directly by the Hall method. The electron mobility in a 1×1017 cm−3 Be-doped sample was about 3500 cm2 /V s at room temperature. Temperature dependence of minority electron mobility is clearly different from that of majority-hole mobility in the same sample. This result indicates the difference in dominant scattering mechanisms for electrons and holes in p-type GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343150
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  • 2
    Electronic Resource
    Electronic Resource
    Abrupt interface AlGaAs/GaAs heterojunction bipolar transistors: Carrier heating and junction characteristics (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 809-820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and characterized a series of abrupt interface Npn AlGaAs/GaAs single heterojunction bipolar transistors in which the aluminum arsenide mole fraction in the emitter has been varied in the range 0% to 55%. Tunneling through the spike in the emitter conduction band is shown to be important. It affects the initial energy of carriers that are injected into the base, their effective mass distribution, and also the collector turn-on voltage. Hot electron injection heats the minority carriers in the base. In an Al0.35Ga0.65As emitter device held at room temperature we have optically measured a carrier temperature Tc=640 K. From diffusive transport theory it follows that the carrier heating reduces the base transit time by 70%. The elevated carrier temperature in this device is shown to be confirmed by the gain (hFE=3500). The gains of all the other devices are limited by imperfect injection efficiencies. Although electroluminescence (EL) spectra reveal that hole injection into the bulk of the emitter takes place in low aluminum composition structures, space-charge recombination is shown to be a more important mechanism. Appendices present Richardson's constant for AlGaAs as a function of composition and the derivation from EL spectra of the ratio of electron-to-hole current across a heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340074
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical properties of Be+ ion-implanted AlxGa1−xAs p-n junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3042-3046 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of the AlxGa1−xAs (x=0, 0.3) p-n junctions fabricated by Be+ ion implantation (2×1014 cm−2, 100 keV) is investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. The annealing temperature dependence of the I-V characteristics indicates that the anneals at 600–850 °C for the GaAs diodes and 650–950 °C for the Al0.3Ga0.7As ones result in the lowest values of the ideality factor (about n=1.8). The C-V characteristics indicate that the Be+ -implanted GaAs diodes have graded junctions, independent of annealing temperatures. The junction shape of the Al0.3Ga0.7As diodes, on the other hand, strongly depends on annealing temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339366
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  • 4
    Electronic Resource
    Electronic Resource
    Be-ion implantation in AlxGa1−x As (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2814-2819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing (RTA) behavior of Be+-ion-implanted AlxGa1−xAs is investigated by means of Hall-effect and photoluminescence (PL) measurements. The electrical activation in GaAs occurs from 400 °C and saturates at about 450 °C, while in AlxGa1−xAs alloys, the activation fractions increase gradually with increase in the annealing temperature. These fractions are evidently smaller in the AlxGa1−xAs alloys than in the GaAs, and larger x alloys give smaller activation fractions at any fixed temperature. PL intensity measurements indicate that annealing at 900 °C results in the maximum optical activation and lattice recovery both for GaAs and AlxGa1−xAs alloys. Secondary ion mass spectrometry (SIMS) analysis reveals Be accumulation at the AlxGa1−xAs (0≤x≤0.3) / SiO2 encapsulant interface caused by Be out-diffusion during RTA. SIMS and differential Hall-effect measurements also suggest significant Be in-diffusion in AlxGa1−xAs alloys especially for larger x values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337063
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  • 5
    Electronic Resource
    Electronic Resource
    Minority electron lifetimes in heavily doped p-type GaAs grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2936-2938 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority electron lifetimes in molecular beam epitaxy grown Be-doped p-type GaAs are characterized systematically. Samples grown at temperatures from 550 to 700 °C have hole concentrations from 1017 to 1020 cm−3. Although electron lifetime in samples grown at temperatures higher than 650 °C remains nearly constant for each free-carrier concentration, it decreases significantly at lower growth temperatures. These tendencies are observed in common for various hole concentrations. These results can be explained in terms of an increase in nonradiative recombination centers incorporated during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104727
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 39-41 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlGaAs/GaAs heterojunction bipolar transistors are fabricated using carbon-doped p-type GaAs base regions grown for the first time by flow-rate modulation epitaxy. Because of the much smaller diffusion coefficient of carbon atoms in GaAs than that of beryllium and other p-type impurities, sharp impurity profiles are achieved. The heterojunction bipolar transistors exhibited high current gains up to 40 for a base layer width of 150 nm and base doping of 2.4×1019 cm−3 . The electron lifetime in heavily carbon-doped GaAs layers is considerably long, indicating favorable quality of heavily carbon-doped layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100827
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon doping for AlGaAs/GaAs heterojunction bipolar transistors by molecular-beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2099-2101 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon doping in GaAs is investigated using solid-source molecular-beam epitaxy. The proportion of inactive C atoms in GaAs layers is found to increase when the free-carrier concentration is higher than about 1018/cm3. The current gain of AlGaAs/GaAs heterojunction bipolar transistors decreases rapidly with increasing base doping. The gradient of this tendency is much steeper than for inverse base doping, indicating the introduction of additional nonradiative recombination centers in heavily doped regions. A high current gain of 300 is achieved with a base doping of 2.5×1018/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109491
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