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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties of CdTe: Experiment and modeling (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3435-3441 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of CdTe in the 1.1–5.6 eV photon-energy range at room temperature has been studied by spectroscopic ellipsometry. The measured ε(E) data reveal distinct structures at energies of the E0, E1, E1+Δ1, and E2 critical points. These data are analyzed using various theoretical models, namely the model dielectric function (MDF), harmonic-oscillator approximation (HOA), and standard critical-point (SCP) model. Results are in satisfactory agreement with the MDF calculations over the entire range of the photon energies. The HOA (five oscillators) cannot successfully explain the peculiar experimental ε(E) data. The SCP model can provide satisfactory fits to the derivatives of ε(E), but does not yield good fits to ε(E). Dielectric-related optical constants of CdTe, such as the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity, are presented and analyzed. Results of the chemical surface-treatment effect on the pseudodielectric functions have also been presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354543
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  • 2
    Electronic Resource
    Electronic Resource
    Optical properties of ZnTe (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 926-931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of ZnTe in the 1.5–5.6 eV photon energy range at room temperature has been studied by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at energies of the E0, E1, E1+Δ1, and E2 critical points. These data are analyzed on the basis of simplified model of the interband transitions. Results are in satisfactory agreement with the calculations over the entire range of the photon energies. Dielectric-related optical constants of ZnTe, such as the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity, are presented and analyzed. Results of surface-treatment effect on the pseudodielectric functions have also been presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353305
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  • 3
    Electronic Resource
    Electronic Resource
    Optical constants of ε-GaSe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 428-431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of ε-GaSe for light polarization perpendicular to the c-axis in the 2.0–5.0-eV photon-energy range has been studied at room temperature by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at energies of the E1 (∼3.6 eV) and E3 (∼4.9 eV) critical points (CPs). The experimental data are analyzed on the basis of a simplified model of the interband transitions. The E1 structure is characterized by a two-dimensional (2D) M0 CP plus 2D discrete exciton, and the E3 structure is assumed to act as a damped harmonic oscillator. Results are in satisfactory agreement with the experiment over the entire range of photon energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351362
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  • 4
    Electronic Resource
    Electronic Resource
    Calculation model for the optical constants of amorphous semiconductors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2304-2308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a phenomenological expression for the calculation of the optical constants, the refractive index, the extinction coefficient, and the absorption coefficient, of amorphous (a) semiconductors. Our proposed model requires four parameters, namely Eg (optical energy gap), Ec (high-energy cutoff), D (nondirect-transition strength), and Γ (damping). The damping parameter Γ is considered to reflect the distribution of electronic states rather than being the consequence of disorder broadening. Analyses are presented for a-Si, a-Ge, and a-GaAs, and results are in satisfactory agreement with the experimental data over the entire range of photon energy (1.5–6.0 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349424
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of the dielectric function of Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1574-1582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is described for calculating the real (ε1) and imaginary (ε2) parts of the dielectric function of Si for temperatures between 30 and 793 K and for photon energies ranging from 1.7 to 5.7 eV. The model reveals distinct structures at energies of the E1 [two-dimensional (2D) M0 critical point (CP)], E2 [a mixture of damped harmonic oscillator (DHO) and 2D-M2 CP], E'0, and E'1 (DHO). The Kramers–Kronig transformation is employed in developing the 2D-M2 CP model. Since the excitonic effects profoundly modify the E1-gap CP structure at low temperatures, the model also accounts for the excitonic effects at this CP. Results are in satisfactory agreement with the experimental information over the entire range of photon energies. The temperature dependence of the strength and broadening parameters at each CP are also given and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347252
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  • 6
    Electronic Resource
    Electronic Resource
    Optical properties of GaAs partially amorphized by ion implantation: Effective-medium-approximation analysis (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7768-7773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the optical properties of GaAs partially amorphized by As+-ion implantation. The model used is based on the two-phase mixture Bruggeman effective-medium approximation in which the partially amorphized layer is assumed as a physical mixture of fully amorphous GaAs and crystalline GaAs. The dielectric functions of the crystalline components deduced from this study differ appreciably from that of the bulk crystalline GaAs, especially in the vicinity of the sharp critical point (CP) features. We find that the change in the optical properties of the crystalline component is due to the increase in the broadening parameters of the CPs caused by implantation-induced damage. The amorphous volume fraction fa is also found to be simply expressed as fa = ([As+]/A)α, where [As+] is the ion fluence, A(=8.5×1013 cm−2) is an amorphization-threshold fluence (i.e., the minimum fluence required to form fully amorphous layer), and α(=0.79) is an amorphization-rate factor of the incident ions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347504
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature silicon homoepitaxy by rf sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5471-5473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that silicon homoepitaxial growth can be achieved by conventional rf diode sputtering at a low growth temperature (Ts∼400 °C). Spectroscopic ellipsometry and the electron channeling pattern are presented to show that the film deposited on a HF-treated substrate is a single-crystalline film while the film deposited without HF treatment is a polycrystalline film. Ar-discharge cleaning of the substrate is also found to greatly improve the surface morphology of the deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351991
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of Si partially amorphized by ion implantation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3313-3319 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical properties of Si partially amorphized by As+-ion implantation have been studied by means of the two-phase mixture Bruggeman effective-medium approximation in which the partially amorphized layer is assumed as a physical mixture of fully amorphous Si and crystalline Si. The dielectric functions of the crystalline components deduced from this study differ appreciably from that of the bulk crystalline Si, especially in the vicinity of the sharp critical point (CP) features. We find that the change in the optical properties of the crystalline component is due to the increase in the broadening parameters of the CPs caused by implantation-induced damage. The amorphous volume fraction fa is also found to be simply expressed as fa=([As+]/A)α, where [As+] is the ion fluence (150-keV As+ ions), A (=1×1015 cm−2) is an amorphization-threshold fluence (i.e., the minimum fluence required to form a fully amorphous layer), and α (=0.46) is an amorphization-rate factor of the incident ions. Dielectric-function-related optical data of partially amorphized Si, such as the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity, are also presented as a byproduct of the present analysis.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350951
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  • 9
    Electronic Resource
    Electronic Resource
    HF- and NH4OH-treated (111)Si surfaces studied by spectroscopic ellipsometry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3467-3471 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry has been used to study HF- and NH4OH-treated (111)Si surfaces. The ellipsometric data indicate that aqueous HF etching results in the removal of the surface oxide and leaves behind Si surfaces terminated by atomic hydrogen. Chemical treatment by aqueous NH4OH solution provides a bare Si surface, but further etching of Si leads to roughening of the sample surfaces. Both the HF- and NH4OH-treated surfaces become hydrophobic as the surface is hydrogen-terminated (HF) or the surface oxide layer is etched completely away (NH4OH).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352950
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  • 10
    Electronic Resource
    Electronic Resource
    Dispersion of the linear electro-optic coefficients in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3702-3704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phenomenological expression is derived for the calculation of the spectral dependence of the linear electro-optic coefficients in zinc-blende-type semiconductors. Analyses are presented for GaAs, and results are in good agreement with published experimental data when a lifetime broadening effect is taken into consideration in the model. It is also found that the E0 gap (lowest-direct gap) strongly contributes to the dispersion of the linear electro-optic coefficients, but not to its absolute value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352365
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