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  • 1
    Electronic Resource
    Electronic Resource
    Nucleation-enhancing treatment for diamond growth over a large-area using magnetoactive microwave plasma chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2979-2983 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel pretreatment enhancing diamond nucleation has been developed for diamond growth over a large area using a magnetoactive microwave plasma chemical vapor deposition method. After the predeposition of carbon films on Si(100) substrates using CH4/CO2/He gas mixtures, diamond films with high nucleation densities were obtained after a subsequent 2 h growth process commonly employed using a CH4/CO2/H2 gas mixture. In the present study, especially, the effect of CO2 concentration in the CH4/CO2/He gas mixture in the pretreatment process has been examined on the carbon film growth. The results show that the diamond nucleation with densities as high as ∼109/cm2 was attained for small CO2 concentrations of 1%–2% during the pretreatment process, while no successful enhancement was enabled for Si substrates pretreated at high CO2 concentrations beyond 3.7%. The structural property of the predeposited carbon films significantly influenced the diamond nucleation. This was evidenced by in situ data of optical emission spectroscopy and quadrupole mass spectroscopy during the pretreatment process, as well as by ex situ data of morphology and composition of the specimens. The volume density of the carbon films obtained after the pretreatment was maximized at a CO2 concentration of 1.9%. The bonding nature of the carbon atoms deduced from the related Raman scattering spectra apparently changed with CO2 concentration. The role of the predeposited carbon films is discussed in relation to etching and agglomeration phenomena during the subsequent diamond growth process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287411
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical properties of surface conductive layers of homoepitaxial diamond films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8267-8273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of surface conductive layers of the undoped diamond films via various subsequent treatments and of the as-grown N-doped diamond films have been investigated in the present study. Hall effect measurements reveal that the sheet carrier density of the surface conductive layers almost remains constant with varying temperature, and the temperature dependence of sheet resistivity is mainly determined by that of the Hall mobility, which varies exponentially with reciprocal temperature. The activation energies deduced for the mobility are demonstrated to monotonously decrease when increasing the sheet carrier densities. Based on these experimental results, the origin of the surface conductive layers is discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370668
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  • 3
    Electronic Resource
    Electronic Resource
    Highly efficient electron emission from diode-type plane emitters using chemical-vapor-deposited single-crystalline diamond (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3739-3741 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A highly efficient electron emitting diode with a flat emission surface has been fabricated using a 600 nm single-crystalline diamond film homoepitaxially grown on high-pressure synthesized (100) diamond by means of chemical-vapor deposition and ion-implantation techniques. The emitter contains a buried injection electrode layer and a hydrogenated diamond surface. When driving voltages ranging from 0.3 to 1.1 kV were applied between them, very efficient electron emissions were observed. The emission efficiency, defined as the ratio of the emission current to the injection diode current, reached 100% for emission currents on the order of 10−7 A and did not significantly depend on the currents. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122879
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  • 4
    Electronic Resource
    Electronic Resource
    The investigation of defect formation in chemical vapor deposited diamond using photoluminescence by ultraviolet synchrotron radiation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4179-4181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) of microwave assisted chemical vapor deposited (CVD) diamond was obtained using ultraviolet synchrotron radiation. The PL spectrum of the 5RL band (intrinsic defect), which cannot be detected in cathodoluminesence, was observed for both undoped (as grown) and boron doped (200 ppm) CVD diamond. The defect formation was characterized in the thin near-surface layer. The peak of boron related origin (2.3 eV) was detected in the boron doped CVD while band A (2.9 eV) was not observed. After remote hydrogen plasma treatment (RHPT), the near-surface defect related peak in the PL spectra disappeared. During RHPT the diamond was rehybridized by hydrogen radicals without etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116978
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  • 5
    Electronic Resource
    Electronic Resource
    Persistent hole burning of the nitrogen vacancy center and the 2.16 eV center of chemical-vapor deposited diamond (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The persistent spectral hole burning effect has been observed for the nitrogen vacancy (NV) center and the 2.16 eV center in chemical-vapor deposited (CVD) diamond. This sideband is the first observation of spectral hole burning in CVD diamond. Holes are burned in the inhomogeneously broadened zero-phonon lines of both the centers by dye lasers. The holes were observed by photoluminescence excitation spectroscopy, with monitoring of the phonon-sideband emission, at temperatures up to 130 K for the NV center and up to 100 K for the 2.16 eV center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108299
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of ohmic contacts to buried diamond layers using Pt layer in the diamond chemical-vapor-deposition process (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1920-1922 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contacts to a buried chemical-vapor-deposited (CVD) diamond layer can be accomplished using a process in which Pt columns automatically grow from the buried layer to the diamond surface by diamond overgrown on a thin Pt film. Hall effect measurements were employed in a temperature region from room temperature to 450 °C to investigate and compare transport properties of a buried B-doped homoepitaxial diamond film with such Pt column electrodes before and after the overgrowth of the upper layer. A useful ohmic contact to the B-doped CVD diamond interlayer was formed by this type of buried electrodes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124871
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  • 7
    Electronic Resource
    Electronic Resource
    The characteristic distribution of silica over the East China Sea shelf slope (1994)
    Springer
    Journal of oceanography 50 (1994), S. 465-477 
    Details
    ISSN: 1573-868X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract The localized near-bottom water with silica content higher than that in the adjacent shelf water was observed to exist at the eastern margins of the East China Sea continental shelf. The core of the high silica water possessed the silica content corresponding to that in the Kuroshio at depths greater than on the shelf. The mixing analysis of water masses using temperature (T) and silica (Si) showed that the core water can be produced through the vertical mixing of intermediate water of the Kuroshio deeper than 100 m. This study provides us a conclusion that the intermediate water of the Kuroshio is strongly mixed on the shelf slope and then upwelled to form the ridge-like distribution of water masses with low temperature and high silica content at the shelf edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02234968
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  • 8
    Electronic Resource
    Electronic Resource
    A structure of the Kuroshio and its related upwelling on the East China Sea shelf slope (1995)
    Springer
    Journal of oceanography 51 (1995), S. 267-278 
    Details
    ISSN: 1573-868X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract The ADCP on an advanced towed fish with controllable main and tail wings, called DRAKE measured a detailed sectional structure of the Kuroshio flowing to the NE along the East China Sea shelf slope west of Okinawa. At the observation period, a countercurrent directed to the SW formed in near-bottom water on the shelf slope. The horizontal flow perpendicular to the stream axis of the Kuroshio constructed a convergence zone around the boundary between the Kuroshio and the countercurrent. An intensive upwelling with the maximum velocity of 2.8 cm s−1 was found to distribute on the shelf slope around the convergence zone. A dynamic cause of this intensive upwelling is discussed carefully.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02285165
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