ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. Ahole accumulation layer has been utilized as hole current channel. The hydrogen-termination wasachieved by remote hydrogen plasma. The sheet resistance strongly depends on the substratetemperature during hydrogen-termination process. The polycrystalline diamond MISFETs showedhigh drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higherthan those of single crystal diamond FETs ever reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1349.pdf
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