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  • 1
    Electronic Resource
    Electronic Resource
    Effect of oxidation-induced stacking faults on dielectric breakdown characteristics of thermal silicon dioxide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5651-5653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric breakdown characteristics of thermal silicon dioxide has been qualitatively and quantitatively correlated with grown-in and thermally induced defects in Czochralski silicon wafers. It is shown that grown-in latent stacking faults and SiO2 precipitates have little effect on oxide integrity, but stacking faults without any involvement of metallic impurities greatly degrade oxide integrity. Although more stacking faults can result in poorer oxide integrity, the correlation between oxide breakdown degradation and stacking fault density is not straightforward.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343680
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  • 2
    Electronic Resource
    Electronic Resource
    Near-noble transition-metal-based ohmic contacts to p-InP: Comparison of Ni and Pd as a base metal (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7792-7796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties were compared for near-noble transition-metal-based ohmic contacts with a M/Zn/M (M=Ni, Pd) sandwiched structure prepared on p-type InP. The minimum contact resistivities of ∼7×10−5 Ω cm2 were obtained in both the NiZn and PdZn contacts, while the process window for the annealing time of the PdZn contacts was much wider than that of the NiZn contacts. From x-ray diffraction and cross-sectional electron microscopic study at the metal/InP interfaces, it was found that ternary compounds such as Ni2.7InP and Pd2InP were formed at the Ni/InP and Pd/InP interfaces, respectively. However, the Ni2.7InP compounds were not stable at annealing temperatures above 300 °C, which is the primary reason of poor thermal stability of the NiZn contacts, while the Pd2InP compound was stable at such high temperatures. Selection of a suitable base metal for InP ohmic contacts was also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370586
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of back-surface polycrystalline silicon layer on oxygen precipitation in Czochralski silicon wafers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth profile of oxygen precipitates in silicon wafers has been investigated for a variety of back surface conditions and thermal treatments. The results clearly show localized enhancement of oxygen precipitation in the region close to back surface polycrystalline silicon layers. The depth profile of intentionally introduced stacking faults on cleaved planes has also been shown to vary and is attributed an enhancement in the absorption of silicon self-interstitials by the back surface polysilicon layer. Consequently, the results observed in this study strongly support the enhancement effect of vacancies on oxygen precipitation in silicon crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101279
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  • 4
    Electronic Resource
    Electronic Resource
    Dominant free-exciton recombination radiation in chemical vapor deposited diamonds (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 451-453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dominant free-exciton recombination radiation has been obtained from chemical vapor deposited diamonds. The crystals are formed in a microwave plasma using the mixtures CO and CO2 diluted with hydrogen. The concentration of CO2 and the position of the samples in the plasma affect the crystallinity of the samples. The peak emission intensity ratio between the free-exciton recombination radiation and the band A emission is more than 20 in the samples formed at the edge of discharging area and with the optimum concentration of CO2. The value is the highest ever reported in diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111126
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  • 5
    Electronic Resource
    Electronic Resource
    Theory of the strain-induced magnetic anisotropy of transition metal-noble metal multilayers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1020-1022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the magnetoelastic anisotropy energies of the transition metal-noble metal multilayers which have fcc [111] perfectly flat interfaces can be expressed with biaxial moduli, magnetostrictions, and lattice mismatch. The calculated magnetoelastic anisotropy energies are larger than the shape anisotropy energy of Ni and large enough for the effective uniaxial magnetic anisotropy energies to be positive. For films with a large interfacial roughness, we have found the strain-induced magnetic anisotropy reduced considerably.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108540
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  • 6
    Electronic Resource
    Electronic Resource
    Synthesis of Al4SiC4 (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The conditions necessary for synthesizing Al4SiC4 from mixtures of aluminum, silicon, and carbon and kaolin, aluminum, and carbon, as starting materials, were examined in the present study. The standard Gibbs energy of formation for the thermodynamic reaction SiC(s) + Al4C3(s) = Al4SiC4(s) changed from positive to negative at 1106°C. SiC and Al4C3 formed as intermediate products when the mixture of aluminum, silicon, and carbon was heated in argon gas, and Al4SiC4 then formed by reaction of the SiC and Al4C3 at 〉1200°C. Al4C3, SiO2, Al2O3, SiC, and Al4O4C formed as intermediate products when the mixture of kaolin, aluminum, and carbon was heated under vacuum, and Al4SiC4 formed from a reaction of those intermediate products at 〉1600°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03414.x
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  • 7
    Electronic Resource
    Electronic Resource
    Synthesis of Magnesium Aluminate Spinel Platelets from α-Alumina Platelet and Magnesium Sulfate Precursors (2003)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 86 (2003), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Spinel platelets were formed from a powder mixture of 3–5 μm wide and 0.2–0.5 μm thick α-Al2O3 and 1–8 μm (average 3 μm) MgSO4 heated 2 h at 1200°C. The hexagonal platelet shape of the original α-Al2O3 platelet was maintained in the spinel, although their size was slightly increased and their surface roughened. When a mixture of α-Al2O3 platelets and MgO powder was heated 3 h at 1400°C, the spinel formed lost the platelet morphology of the alumina.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2003.tb03589.x
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of Liquid Exsolved by Remelting Reaction of Belite (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: We examined the chemistry and structure of the liquid that was exsolved by the remelting reaction of belite. Electron probe microanalysis revealed that the liquid concentrated the impurity components (e.g., Na2O, K2O, Al2O3, and Fe2O3) of the parent belite. Micro-Raman spectroscopy showed the similarity of the spectra of the exsolved liquid and amorphous calcium aluminoferrite solid solution. The transition from the crystalline to the amorphous state of the solid solution was induced by increasing the excitation laser power. Accordingly, the liquid at ambient temperature was most likely in a glassy state. The chemical composition of the liquid, deduced from the above experiments, was ∼81 mass% Ca2AlFeO5 and ∼19 mass% Ca2SiO4. The alkalies, which have never been detectable in crystalline calcium aluminoferrite, were probably necessary for the vitrification of the liquid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00804.x
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  • 9
    Electronic Resource
    Electronic Resource
    Improved Filtration Performance of Continuous Alumina-fiber-reinforced Mullite Composites for Hot-Gas Cleaning (2005)
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of filtration layer morphology on filtration performance at 673 K was investigated for continuous alumina-fiber-reinforced mullite composite filters that capture fly ash on their outer surfaces. Two types of filtration layers were prepared on the outer surfaces: a mono-layer consisting of mullite agglomerated particulates and a bi-layer, with mullite whiskers formed by a vapor-phase reaction and strongly adhered to the particulates exposed on the outer surfaces. For filters with mono-filtration layers, the filtration efficiency was improved slightly by increasing the filtration layer thickness. However, the maximum differential pressure increased during the filtration tests. Adhesion of whiskers to the outer surface decreased the maximum differential pressure to about one-third less than that with the mono-filtration layer. This low differential pressure remained constant throughout the duration of the test, with corresponding increases in filtration efficiency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1551-2916.2004.00027.x
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  • 10
    Electronic Resource
    Electronic Resource
    Oxidation Protection of MgO–C Refractories by Means of Al8B4C7 (2001)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The effect of Al8B4C7 used as an antioxidant in MgO–C refractories and the behavior of Al8B4C7 in CO gas were investigated in the present study. Al8B4C7 was found to react with CO gas, to form Al2O3(s), B2O3(l), and C(s), at temperatures 〉1100°C. The Al2O3 reacts with MgO to form MgAl2O4 near the surface of the material. At the same time, B2O3(l) evaporates and reacts with MgO, to form a liquid phase, at 〉1333°C, the eutectic point between 3MgO·B2O3 and MgO. The coexistence of the liquid and MgAl2O4 makes the protective layer more dense, thus inhibiting oxidation of the refractory. At 〉1333°C, the process apparently is controlled by oxygen diffusion, whereas it is controlled by chemical reaction when the temperature is 〈1333°C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.2001.tb00701.x
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