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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6414-6414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn and Cr powders were produced from electrolytic Mn and Cr by ball milling in a stainless steel container with carbon steel balls. The milling time, t, varied from 5 min to 8 h. Structures were investigated by x-ray and electron microscopy. Chemical compositions of samples were checked by flame atomic absorption spectrometry. The magnetization was measured by induction method in a pulsed magnetic field up to 10 T. The main part of Mn and Cr powder volume was occupied by α-Mn and b.c.c. Cr, respectively. Diffraction peaks became vaster and more asymmetric with increasing t due to the onset of defects of the structure. The presence of MnO was observed in the Mn sample after 8 h of milling. The size of Mn and Cr particles over same critical t (for chromium t=100 min) was no more than 1 mm. A noticeable Fe content, which increases at higher t, was observed. The Mössbauer spectra of Cr and Mn samples showed the lines of α-Fe and γ-Fe. High values of saturation magnetization, σ, up to 5.4 emu/g, and susceptibility and existence of the hysteresis in low fields at temperatures up to 360 K, indicate ferromagnetic ordering of the samples. Within the range of 78–360 K σ only slightly depends on temperature, but noticeably grows with increasing t at fixed temperature in Cr powders, remaining practically constant in Mn powders. No correlation could be observed between Fe content and σ : the latter remained the same in Mn with Fe concentration increasing, but in Cr, as Fe concentration increased sevenfold, it grew by four times. Spontaneous magnetization per mass unit of Fe, σ, was sufficiently lower than that of pure α-Fe (220 emu/g). The obtained values of σ correspond neither to Fe solid solution nor to pure Cr or Mn. Elucidation of the obtained results can be done both by the presence of α-Fe particles and by variation of exchange interactions caused by sample defects. A noticeable difference of σ values from those properties of bulk α-Fe can be explained by γ-Fe availability and grinding of particles being smaller than single domain sizes.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1469-1469 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-luminosity system comprising optically matched sample chamber, monochromator-spectrograph, and detectors of luminescences has been designed for XEOL spectroscopy using synchrotron radiation. Exciting x-ray radiation penetrated the sample chamber through a window made of a Be foil. The sample is mounted on the sample holder of a nitrogen cryostat. The entrance slit of the monochromator is fixed on the sample's surface. Luminescence is excited and detected at the same side of the sample and optical slit; the angle between the exciting radiation and the entrance shoulder of the monochromator is 45°. Sample chamber has two windows made of a Be foil for incident and transmitted x-ray radiation and another one made of MgF2 for outcoming luminescence. A Seya–Namioka mounting with 70.5° has been chosen for the spectra instrument as it is characterized by a flat field in the focal surface in the area of the exit slit, providing the possibility to detect luminescence either in the mode of a monochromator or a spectrograph. In the first case it is detected by a photomultiplier with a sodium salicylate screen or a mirror in front of it depending on the spectral range. In the spectrograph a photodetector array is applied. The switching of the modes is achieved by a mirror in front of the exit slit. Changeable diffraction gratings with radius 250 mm and density of grooves per mm 300 and 600 make the instrument efficient in the spectral range 110 to 1400 nm providing resolution up to 1 nm. The sample chamber and the monochromator are separated by a window made of MgF2. Vacuum in the sample chamber is better than 10−7 Torr, in the monochromator better than 10−4 Torr. Temperature of the sample can be varied in the range 80–600 K. The level of the scattered light in the instrument is lower than 10−4.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8004-8007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a magnetic field on the ferroelectric domain structure of single crystal samples of the metastable orthorhombic ferroelectric ferroelastic β'-phase of Sm2(MoO4)3, Gd2(MoO4)3, Tb2(MoO4)3, and TbGd(MoO4)3 was investigated at 78 K in pulsed magnetic fields up to 100 kOe. It was shown that a magnetic field of certain orientation may change a ferroelectric domain structure in Tb2(MoO4)3 and TbGd(MoO4)3 that was accompanied by large changes of the electric polarization of the sample under investigation. The effect is explained by large magnetostrictive deformations. The prediction is made that there must be a positive longitudinal magnetostriction in a magnetic field applied along the [100] crystallographic axis and a negative transverse magnetostriction in the (001) plane in a magnetic field applied along the [100] crystallographic axis in Tb2(MoO4)3 and in TbGd(MoO4)3 β'-phases at 78 K and at a magnetic field strength of about 100 kOe.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2104-2106 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful application of alternatively strained short-period superlattices for the waveguide region of optically pumped and injection room-temperature ZnSe-based lasers operating within the 470–523 nm spectral range. The design of optically pumped ZnMgSSe/ZnSSe/ZnCdSe lasers provides extremely low threshold power densities due to the enhanced electronic and optical confinement. Room-temperature BeMgZnSe/ZnCdSe injection lasers with threshold current density of about 750 A/cm2 and characteristic temperature as high as 366 K are demonstrated. The peculiarities of carrier transport across the short-period superlattices are explained by a thermally activated mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3168-3171 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single fractional monolayer (FM) CdSe/ZnSe structures have been grown by molecular beam epitaxy (MBE), employing both conventional MBE and migration-enhanced epitaxy (MEE). A precise calibration of the FM mean thickness in the range of 0.15–3.0 ML has been performed for both techniques, revealing more than a 3.5 times lower Cd incorporation ability for the MEE mode at the same Cd and Se incident fluxes. Steady-state and time-resolved photoluminescence spectroscopy is used to characterize the intrinsic morphology of the CdSe FMs, with a special emphasis on the submonolayer thickness range. Both MBE and MEE grown samples exhibit inhomogeneity of the excitonic system, which can be explained by coexistence of a homogeneous alloylike layer and relatively large CdSe 2D clusters. The MEE samples display smaller fluctuations of the layer thickness and island sizes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a self-organized way on a GaAs(100) surface upon deposition of 1.2 nm GaSb followed by a GaAs cap layer. Plan-view transmission electron microscopy studies reveal well developed rectangular-shaped GaSb islands with a lateral extension of ∼20 nm. Intense photoluminescence (PL) is observed at an energy lower than the GaSb wetting layer luminescence. This line is attributed to radiative recombination of 0D holes located in the GaSb dots and electrons located in the surrounding regions. The GaSb quantum dot PL dominates the spectrum up to high excitation densities and up to room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study optical properties of ZnMgSSe-ZnCdSe structures with CdSe submonolayers inserted in a ZnSe matrix. Remarkably high exciton oscillator strength is found in ultrashort-period submonolayer CdSe-ZnSe superlattices, as compared to ZnCdSe quantum wells of comparable average width and Cd composition. In conventional ZnCdSe quantum wells the lasing occurs at energies ∼30 meV below the free heavy-hole exciton transition revealed in photoluminescence and in optical reflectance spectra. In the CdSe submonolayer superlattices lasing occurs at energies in the very vicinity of the heavy hole exciton resonance, directly in the region of strongly-enhanced exciton-induced modulation of the reflectance spectrum, and, consequently, refractive index change. We attribute the effects observed to exciton localization by potential fluctuations caused by nanoscale CdSe islands formed during submonolayer deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2626-2628 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic force microscopy (AFM) of cleaved facets of ZnSe-based lasers with various active region designs is reported. Different AFM probe friction on the materials forming the laser structures are exploited for imaging their basic layers. Unlike ZnMgSSe-based lasers, the cleaved surface of cladding layers in BeMgZnSe-based structures is atomically flat, which is attributed to hardening of the II–VI materials by Be incorporation. Nanometer-high steps and undulations are observed at the laser heterointerfaces on cleaved facets. The shape and height of such topographic singularities located in the vicinity of a (Zn,Cd)Se quantum well active region depend on the strain distribution in the laser waveguide. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of suppression of the dc current through an Esaki–Tsu GaAs/AlAs superlattice (that shows a negative differential conductance due to Bloch oscillations of miniband electrons) caused by irradiation with millimeter wave radiation (frequency 78 GHz). A theoretical analysis of the dc current indicated that the high-frequency electric current followed the high-frequency field with a response time smaller than the period (∼10−11 s) of the field. Our experiment, with the superlattice at room temperature, demonstrates that the Esaki–Tsu superlattice is suitable for ultrafast millimeter wave detection and other high-frequency applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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