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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1350-1352 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectively doped heterostructures using unscreened and screened Coulomb potentials. Potential fluctuations are found to be minimized (corresponding to maximum carrier mobility) if the dopant distribution is δ-function-like. Our experimental study of electron mobilities in selectively doped heterostructures grown by molecular beam epitaxy reveals that carrier mobility indeed increases as the thickness of the doped layer is reduced, in agreement with the calculation. A peak electron mobility of 5.5×106 cm2 /V s is obtained at low temperatures in a selectively δ-doped heterostructure.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2162-2164 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New full range analytic approximation formulas for efficient calculation of the reduced Fermi energy η and the Fermi–Dirac integral F−1/2 in terms of u=F1/2, which is simply related to the free-carrier concentration and temperature, are presented. The maximum fractional error is 0.033% for η and 0.05% for F−1/2, while the maximum absolute error for η is 0.000 41. These formulas facilitate analyses of carrier transport and device characteristics in structures involving smaller band-gap semiconductors.
    Type of Medium: Electronic Resource
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