Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3059-3061
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low-resistivity (ρ) and highly transparent pure indium oxide (In2O3) thin films grown on glass substrates by pulsed laser deposition at substrate temperature (Ts) between room temperature and 200 °C are reported. As-deposited films with resistivity (ρ) of ∼3×10−4 Ω cm and transmittance (visible), above 87% were obtained within a narrow range of PO2 (1×10−2–1.5×10−2 Torr). Hall effect measurements showed that the low ρ resulted from the high carrier concentration (n)∼7×1020 cm−3, whereas modest Hall mobility (μ〈45 cm2 V−1 s−1) was measured. X-ray diffraction indicated that the films prepared at Ts≤100 °C were amorphous, while at Ts≥150 °C polycrystalline films were obtained. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124064
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