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  • 1
    Electronic Resource
    Electronic Resource
    Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 511-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped GaAs films have been grown by solid-source molecular beam epitaxy using a graphite filament. The films were doped from 1×1015 cm−3 to 5×1019 cm−3 and the resulting mobilities are equivalent to beryllium-doped films. A slight dependence of As4/Ga flux ratio on carbon doping was observed. The use of either As2 or As4 did not significantly affect the carbon doping concentrations. Lattice contractions were observed for films doped heavily with carbon or beryllium. For a given doping concentration the contraction is more significant for carbon doping which is consistent with the smaller tetrahedral covalent radius of carbon compared to beryllium. Good agreement between observed and calculated lattice contractions with carbon doping is obtained. Annealing studies on a film doped with carbon at 5×1019 cm−3 indicate that the electrical properties and lattice contraction are quite stable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347695
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 361-363 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon tetrachloride (CCl4) has been used as a carbon doping source for the base region of a GaAs/AlGaAs Npn heterojunction bipolar transistor (HBT) grown by low-pressure metalorganic chemical vapor deposition (MOCVD). Transistors were fabricated and characterized for dc current gain, emitter-base junction ideality factor, base contact resistance, and external base resistance. Microwave characterization by S-parameter measurement was performed to determine the common emitter current gain and maximum available gain as a function of frequency. Transistors with the base contact area self-aligned to a 3×10 μm emitter finger had a dc current gain as high as 50, an emitter-base junction ideality factor of n=1.2, and a current gain cutoff frequency of ft=26 GHz. Transistors of equal emitter area without self-alignment exhibited dc current gain as high as 86, n=1.2, and ft=20 GHz. A base contact resistance of Rc=2.85×10−6 Ω cm2 and an external base sheet resistance of Rs=533.4 Ω/(D'Alembertian) were measured. These preliminary results indicate that carbon doping from CCl4 may be an attractive substitute for Zn or Mg in GaAs/AlGaAs HBT structures grown by MOCVD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102785
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    High-power gain-guided coupled-stripe quantum well laser array by hydrogenation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 691-693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power coupled-stripe (ten-stripe) AlxGa1−xAs-GaAs quantum well lasers that are fabricated by hydrogenation are described. Continuous (cw) room-temperature thresholds as low as Ith=90 mA and internal quantum efficiency as high as 85% are demonstrated. Continuous 300 K laser operation generating 2×375 mW (0.75 W) at 910 mA (10Ith) or 57% efficiency is described (8-μm-wide stripes on 12 μm centers). Minimal heating effects are observed up to the point of catastrophic failure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99349
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  • 4
    Electronic Resource
    Electronic Resource
    Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 637-639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the construction and room-temperature (300 K) continuous (cw) operation of p-n diode AlxGa1−xAs-GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single-well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain-guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8×103 A/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98371
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  • 5
    Electronic Resource
    Electronic Resource
    Carbon-doped AlxGa1−xAs-GaAs quantum well lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 522-524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating that carbon (C) can be used as the active p-type dopant in high-quality AlxGa1−xAs-GaAs quantum well laser crystals. We show, by fabricating three different types of stripe geometry laser diodes (oxide stripe, hydrogenated stripe, and impurity-induced layer-disordered stripe), that C is a stable dopant and compatible in behavior with typical integrated-circuit style of device processing. The data suggest that more complicated laser geometries are possible on C-doped material because of minimal pattern "undercutting'' after processing by, for example, hydrogenation or impurity-induced layer disordering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99403
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  • 6
    Electronic Resource
    Electronic Resource
    Stripe-geometry AlxGa1−xAs-GaAs quantum well lasers via hydrogenation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1629-1631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on stripe-geometry gain-guided AlxGa1−xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation ("hydrogenation'') of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation "undercutting'' of the oxide mask.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98577
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  • 7
    Electronic Resource
    Electronic Resource
    Supermode behavior of coupled two-stripe AlxGa1−xAs-GaAs quantum-well heterostructure lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 381-385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the simplest form of multiple-stripe laser array, a gain-guided two-stripe configuration of wide spacing (∼15 μm, weak or moderate coupling), showing the effects of the two forms of supermode oscillation on the laser's L-I characteristic, far-field emission pattern, and radiation spectrum. Measurements of the spatial dependence of the gain, at various currents, for a modified (antireflection-coated) two-stripe AlxGa1−xAs-GaAs quantum-well heterostucture laser diode provides a basis for explaining the onset of oscillations of both forms of supermodes (n=1, symmetric or "even,'' and n=2, antisymmetric or "odd''). These results agree with the significant band filling of the single quantum well and the supermode energy splitting of ∼15 meV in high-level laser operation. The data and results presented are obtained by operating antireflection-coated diodes in a tunable external grating cavity and by taking gain measurements on and between the stripes at the Fabry–Perot facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339808
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  • 8
    Electronic Resource
    Electronic Resource
    Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4356-4362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous threshold current (Ith) variation with temperature and with pulse length, and large delays (up to 6 μs) between excitation and the turn-on of stimulated emission are observed in index-guided AlxGa1−xAs-GaAs quantum-well heterostructure (QWH) lasers. These effects are found in laser diodes incorporating "spike'' doping layers (δ-Mg and δ-Se) within the QWH active region and that are fabricated via laser-assisted Si impurity-induced layer disordering. The introduction of contaminants during the localized melting and regrowth of the laser-induced layer disordering, and the effect of these impurities (or defects) with the active region "spike'' doping create traps. The traps cause Ith to increase (not decrease) at lower temperature and at shorter current pulses, and cause time delay in turn-on of the operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339068
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  • 9
    Electronic Resource
    Electronic Resource
    Damaged and damage-free hydrogenation of GaAs: The effect of reactor geometry (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5175-5178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects on GaAs hydrogenation of two different rf reactor types are investigated, one a parallel-plate reactor with a capacitively coupled discharge and the other an inductively coupled system. The atomic hydrogen, dissociated in the plasma of either system, passivates impurities in GaAs. The plasma in the capacitively coupled discharge reactor develops a large self-bias relative to the sample and large ion energies (∼100 eV), resulting in significant etching of the GaAs surface. In spite of the surface erosion, passivation of donors by hydrogen diffusing into the material is observed. The sample hydrogenated in the inductively coupled discharge (kTe/q 〈1–2 eV) is not etched, exhibiting, nevertheless, a comparable passivation of donors. Hydrogenation without surface damage is accomplished with the sample in the glow discharge of an inductively coupled reactor but not in a capacitively coupled discharge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342428
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence and stimulated emission in Si- and Ge-disordered AlxGa1−xAs-GaAs superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 101-107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and absorption data are presented on AlxGa1−xAs-GaAs superlattices (SLs) disordered into bulk-crystal AlyGa1−yAs (0≤y≤x) by Si or Ge diffusion. The bulk-crystal AlyGa1−yAs produced by impurity-induced disordering (by Al-Ga interchange) is determined by transmission electron microscopy, absorption measurements, and photoluminescence to be homogeneous, with an alloy composition (y) that agrees with the average Al concentration of the SL. For low enough Al concentration (y≈0.23〈yc =0.44, the direct-indirect crossover), in absorption the Ge- or Si-disordered SL exhibits (4.2 and 77 K) the bulk-crystal exciton, which is characteristic of homogeneous alloy (AlyGa1−yAs). Stimulated emission (4.2 and 77 K) in bulk-crystal AlyGa1−yAs is observed ΔE≤50 meV below the band edge via photopumping for both Si- and Ge-disordered SLs of Al concentration yielding y∼0.23 and y∼0.39. Shallow hydrogenlike donor or acceptor states are characteristic of AlxGa1−xAs-GaAs SLs disordered with Ge or with Si. For the Si impurity (i.e., an AlxGa1−xAs-GaAs SL disordered with Si), however, much deeper states (transitions) are observed that saturate at higher photoexcitation levels. These states are attributed to nearest-neighbor or extended Si-Si pairs since similarly disordered AlxGa1−xAs-GaAs SLs doped with Ge do not exhibit deeper states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335710
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