Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    On the use of Chandrasekhar's basis for helium and its isoelectronic series (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 4986-4988 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report a systematic investigation of the ability of Chandrasekhar's basis to produce energy eigenvalues for the helium isoelectronic sequence and compare it with the standard Hylleraas' basis. The basis is found to be extremely useful to obtain fast and accurate energy approximations for H−. In addition, we also investigate the dependence of energy eigenvalues on the interelectronic u coordinate and find it to be more important for Z≥2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463851
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    In situ stress measurement apparatus for liquid applied coatings (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4564-4568 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus for measuring stress development in polymer and ceramic coatings is described. The device combines the coating, processing (chilling, curing, drying), and stress measurement steps necessary to accurately monitor stress development in situ. The measurement system was developed to study the effects of processing variables (e.g., temperature, air flow, relative humidity, etc.) on stress development in coatings ranging from solvent-cast polymers and particulate films to radiation-cured materials. The combination of coating, processing, and stress measurement allows us to mimic conditions used in an industrial setting. Results are reported for polyisobutyl methacrylate cast in toluene and aqueous gelatin coatings that demonstrate the utility of the apparatus in studying how stress evolution and magnitude relate to different process controls. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148432
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Substance Use, the Social Bond, and Delinquency* (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Sociological inquiry 75 (2005), S. 0 
    Details
    ISSN: 1475-682X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Sociology
    Notes: This research integrated elements from the drugs-delinquency field with life course criminology to examine the reciprocal relationship between substance use and delinquency during adolescence. Data from three waves of the National Youth Survey were used to examine research hypotheses. Findings indicate that there were significant direct and indirect effects. There was evidence of stability in both behaviors, prior substance use predicted future substance use and prior delinquency predicted future delinquency. In addition, prior substance use predicted future delinquency and prior delinquency predicted future substance use. This was due, in part, to the significant indirect connections in the relationship between substance use and delinquency. It appears that substance use and delinquency weaken the social bond, which leads to continued substance use and delinquency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1475-682X.2005.00114.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spontaneous formation of a dicoordinate iminophosphine from a tricoordinate triaminophosphine via a tetracoordinate phosphorane (1993)
    s.l. : American Chemical Society
    Inorganic chemistry 32 (1993), S. 4988-4989 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00075a002
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Synthesis and Structure of the One-Dimensional Telluride Cs4Zr3Te16 (1994)
    s.l. : American Chemical Society
    Inorganic chemistry 33 (1994), S. 2713-2715 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00091a007
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Uranium Tellurides: New One- and Two-Dimensional Compounds CsUTe6, CsTiUTe5, Cs8Hf5UTe30.6, and CsCuUTe3 (1995)
    s.l. : American Chemical Society
    Inorganic chemistry 34 (1995), S. 3165-3172 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00116a006
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Phosphorus and boron implantation in 6H–SiC (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6635-6641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus and boron ion implantations were performed at various energies in the 50 keV–4 MeV range. Range statistics of P+ and B+ were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature range of 1400–1700 °C using either a conventional resistive heating ceramic processing furnace or a microwave annealing station. The P implant was found to be stable at any annealing temperature investigated, but the B redistributed during the annealing process. The implant damage is effectively annealed as indicated by Rutherford backscattering measurements. For the 250 keV/1.2×1015 cm−2 P implant, annealed at 1600 °C for 15 min, the measured donor activation at room temperature is 34% with a sheet resistance of 4.8×102 Ω/(square, open). The p-type conduction could not be measured for the B implants. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365236
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Growth of plant root cultures in liquid- and gas dispersed reactor environments (1993)
    s.l. : American Chemical Society
    Biotechnology progress 9 (1993), S. 317-322 
    Details
    ISSN: 1520-6033
    Source: ACS Legacy Archives
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bp00021a011
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Material and n-p junction properties of N-, P-, and N/P-implanted SiC (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5118-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elevated temperature (ET) multiple energy N, P, and N/P implantations were performed into p-type 6H-SiC epitaxial layers. For comparison, room temperature (RT) N and P implantations were also performed. In the N/P coimplanted material a sheet resistance of 2.1×102 Ω/(square, open) was measured, which is lower compared to the values measured in N or P implanted material of the same net donor dose. The RT P implantation resulted in heavy lattice damage and consequently low P electrical activation, even after 1600 °C annealing. After annealing the Rutherford backscattering yield either coincided or came close to the virgin level for ET implantations and RT N implantation, whereas for RT P implantation the yield was high, indicating the presence of high residual damage. Vertical n-p junction diodes were made by selective area ET N, P, and N/P implantations and RT N and P implantations using a 2.5 μm thick SiO2 layer as an implant mask. The diodes were characterized by capacitance–voltage and variable temperature current–voltage measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367329
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Magnesium-induced vasodilation in the dorsal hand vein (2004)
    Oxford, UK and Malden, USA : Blackwell Science Ltd
    BJOG 111 (2004), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective  Magnesium affects blood pressure by modulating vascular tone and reactivity. In obstetric patients, magnesium is administered to prevent eclamptic seizures and as a tocolytic to treat preterm labour. Prior to studying vascular sensitivity in women with pre-eclampsia, we sought to determine the effect of magnesium on venous tone in healthy women of childbearing age.Design  Dose–response study.Setting  Columbia-Presbyterian Medical Center, New York.Population  Ten healthy non-pregnant women (age range 21–47 years).Methods  Vascular response to magnesium sulphate (MgSO4) was measured in a dorsal hand vein using the linear variable differential transformer (LVDT) technique. Complete dose–response curves to MgSO4 (0.0000275–0.088 mmol/min) were determined after 50% preconstriction of the vein with phenylephrine.Main outcome measures  The ED50 of MgSO4 (dose resulting in 50% of maximal effect, Emax) was determined. Blood samples from the contralateral upper extremity were obtained to assess total plasma magnesium levels at baseline and at the highest infused dose of magnesium. ED50 results are expressed as geometric mean (95% confidence interval, CI). Emax results and magnesium plasma concentrations are expressed as mean [SD].Results  The ED50 of MgSO4 was 0.000307 mmol/min (95% CI 0.138, 0.666) and Emax was 102% [20%].Conclusion  Magnesium induces dose-dependent venodilation in healthy women in the absence of systemic haemodynamic effects. The dose resulting in vasodilation using the LVDT/hand vein model is two to three orders of magnitude less than the therapeutic doses of magnesium used for tocolysis or seizure prophylaxis. Studies of the effect of systemically administered therapeutic doses of magnesium on vascular reactivity in pre-eclampsia will be of interest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.2004.00114.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...