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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial differences between SiO2 grown on 6H-SiC and on Si(100) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1448-1450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxides grown on p-type 6H-SiC and on Si(100) were studied using x-ray photoelectron spectroscopy and sputter depth profiling to determine what differences exist between the two systems. The oxide on SiC is found to be stoichiometric SiO2, but the oxide is structurally different from the oxide grown on Si(100). We propose that strain introduced during processing accounts for the structural differences. We also found that Si atoms at the SiO2/SiC interface are chemically different from Si atoms in the bulk of SiC and a number of possible explanations for this are given. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123597
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1437-1439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy and sputter depth profiling were used to investigate SiO2 grown on 4H- and 6H-SiC with and without a reoxidation procedure. The oxides grown and oxide-substrate interfaces formed on 4H and 6H were similar in chemistry but different from Si(100). Reoxidation changes the structure of the oxide and the abruptness of the oxide-substrate interface. We propose a model for SiC oxidation where a transition layer containing Si–Si bonds is produced between the oxide and the SiC substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290490
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    The kinetics and mechanism of scanned probe oxidation of Si (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1782-1784 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the kinetics of scanned probe oxidation under conditions of high humidity and pulsed bias. For a hydrophobic Si surface the oxidation rate for short pulse times (∼10 ms) is controlled by the density of H2O molecules in the ambient humidity surrounding the tip-sample interface. At longer pulse times (∼0.1 s) liquid H2O bridges this interface and the maximum oxidation rate increases by a factor of ∼104 because of the increased density of H2O molecules. We propose that the rate-limiting step of the oxidation process is the production of O anions from the ambient humidity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126166
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    Paper (German National Licenses)
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