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  • 1
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazine (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 56-64 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single layers and superlattices of GaAsN/GaAs and InGaAsN/GaAs were grown using metalorganic molecular beam epitaxy with dimethylhydrazine, trimethylindium, triethylgallium, and conventional arsenic sources. Nitrogen incorporation into the solid was investigated as a function of the substrate temperature and fluxes. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct arising from reactions between triethylgallium and dimethylhydrazine, while neglecting reactions between precursors of trimethylindium and dimethylhydrazine. The model accounts for the experimentally observed relationship between growth rates and nitrogen incorporation in GaAsN and InGaAsN. Our experiments show that the absolute arsenic flux and the As/N flux ratio play a critical role in the growth of single phase GaAsN. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1419206
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  • 2
    Electronic Resource
    Electronic Resource
    A continuous wave method for simultaneous sound velocity and attenuation measurements (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 271-273 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a cw method for simultaneous ultrasonic phase velocity and attenuation measurements. This method uses a phase locked loop technique to lock the carrier frequency of a frequency modulated drive to the center of the mechanical resonance of the composite oscillator consisting of the sample and the transducers. At the same time, by measuring the rf amplitude modulation index at twice the modulation frequency, the change in the resonator Q factor, and therefore the attenuation, can also be measured. We have applied this method to measure the sound velocity and attenuation of a heavy fermion superconductor UPt3 down to 5 mK. With only 5 nW of rf excitation, we could detect changes in the phase velocity as small as Δv/v∼5×10−9. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146582
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  • 3
    Electronic Resource
    Electronic Resource
    Phonon modes of ZnS1−xTex alloys epitaxially grown on (100) GaAs substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3465-3467 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex(0〈x〈1) alloys grown on (100) GaAs substrates by molecular beam epitaxy are investigated using the x-ray diffraction and Raman scattering. The frequencies of long wavelength ZnTe-like and ZnS-like longitudinal optical phonons determined from Raman scattering show linear variation with the composition x. The frequency of the zone-center optical phonons as a function of x of the ZnS1−xTex mixed crystal shows a typical two-mode behavior, which is in good agreement with the theoretical results from a modified random-element isodisplacement model.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365043
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  • 4
    Electronic Resource
    Electronic Resource
    The role of high-pressure sintering in preparing high-quality n-type Nd2−xCexCuO4−y superconductors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 843-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-pressure high-temperature sintering (HHS) under 1.0, 2.0, 4.0, and 6.0 GPa for a short time was directly used to reduce n-type Nd1.85Ce0.15CuO4−y. Superconductors with higher critical temperature were obtained. The samples display lower resistivity, and more metalliclike resistance behavior at normal state with increasing sintering pressure. A small increase of lattice parameter and cell volume was observed via electron and x-ray diffraction. Transmission electron microscopy studies also show that there is a preferential orientation along the c axis among the neighboring grains. This helps get well-matching grain boundaries in the HHS samples. A Cu2O high-pressure phase was found via energy-dispersive x-ray analysis in the sample treated above 5.0 GPa, which is thought to be a deleterious factor for superconductivity. Sintering under suitable pressure not only enhances the intragranular conductivity, but also effectively improves the intergranular links. Finally, via the assumed interstitial oxygen ordering in the T' structure, a possible mechanism of n-type reduction is proposed based on the change in tolerance factor under reduction atmosphere and high pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353323
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  • 5
    Electronic Resource
    Electronic Resource
    Vibrational autodetachment spectroscopy of Au−6 : Image-charge-bound states of a gold ring (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 7515-7518 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Spectral experiments on mass-selected negative cluster ions of gold and silver were performed in the wavelength range near the threshold for one-photon photodetachment of the extra electron. The Au−6 cluster ion displayed a uniquely well resolved spectrum consisting of a progression in a single vibrational mode. Details of this threshold photodetachment spectrum and the associated photoelectron energy distribution suggest an explanation based on autodetachment from totally symmetric vibrational levels of very weakly bound excited electronic state (bound by image charge forces) of the Au−6 cluster in the form of a planar, six-fold symmetric, gold ring.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459378
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraviolet photoelectron spectroscopy and photofragmentation studies of excess electrons in potassium iodide cluster anions (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 2453-2459 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ultraviolet photoelectron spectroscopy (UPS) and photofragmentation data for (KI)−n, K(KI)−n , and K2(KI)−n (n up to 13) are presented. The excess electrons in these clusters are all loosely bound with vertical detachment energies below 1.6 eV, and the photofragmentation data correlated well with the UPS results. Our results for the stoichiometric clusters are in good agreement with theoretical predictions, and the ground state geometry of these clusters are discussed. For the excess potassium cluster series, we suggest the possible existence of electron spin pairs in some of these cluster anions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462049
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  • 7
    Electronic Resource
    Electronic Resource
    Ferromagnetic order at Tb surfaces above the bulk Curie temperature (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3667-3668 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic order at surfaces of the 4f rare-earth metal terbium is investigated using electron capture spectroscopy (ECS), which probes the electron spin polarization (ESP) of the topmost surface layer. In ECS, the capture of spin-polarized electrons during grazing-angle ion-surface interaction is used to determine the ESP due to long- and short-ranged surface magnetic order. It is found that long-ranged ferromagnetic order exists far above the bulk Curie temperature, measured to be TCb =220 K. At 140 K, the long-ranged ESP amounts to 24%. With increasing temperature, the ESP first decreases montonically up to the bulk Néel temperature TNb=228 K, then exhibits a pronounced maximum at T=238 K, and ultimately vanishes at the surface Curie temperature TCs =248 K. These striking results on enhanced magnetic order at Tb surfaces suggest the presence of very large surface anisotropies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340679
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  • 8
    Electronic Resource
    Electronic Resource
    Integration of Pb(Zr0.52Ti0.48)O3 epilayers with Si by domain epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1458-1460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality lead zirconate titanate films (PZT) have been grown on yttrium barium copper oxide (YBCO) bottom electrode by domain epitaxy where integral multiples of lattice constants match across the interface. The YBCO films were epitaxially fabricated on Si (100) by introducing epilayer geometry of strontium titanate/magnesium oxide/titanium nitride. Pulsed-laser ablation was used to evaporate these five stoichiometric targets in a high vacuum chamber. X-ray diffraction and high-resolution transmission electron microscopy techniques were employed to gain understanding of the structure, crystallinity, and interfaces in these epilayers. The electrical characterization of the PZT films with evaporated silver contacts resulted in superior values of spontaneous polarization, remnant polarization, and coercive fields. This heterostructure opens a way for integration of epitaxial single-crystal PZT-based capacitors with silicon-based devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126063
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  • 9
    Electronic Resource
    Electronic Resource
    Nitrogen incorporation kinetics in metalorganic molecular beam epitaxy of GaAsN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3516-3518 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of GaAsN were grown on GaAs by metalorganic molecular beam epitaxy using dimethylhydrazine, triethylgallium, and conventional arsenic sources. The nitrogen incorporation in GaAsN was studied by varying the arsenic and gallium fluxes, at growth temperatures between 430 and 500 °C. The nitrogen incorporation kinetics and growth mechanism have been modeled by assuming formation of an adduct of trimethylgallium and dimethylhydrazine. The model accounts for experimentally observed relationships between growth rates and incorporation of N into GaAsN, fluxes of Ga, As, and N, and the growth temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124138
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  • 10
    Electronic Resource
    Electronic Resource
    Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An almost 100% activation ratio {(NA-ND)/[N]} for a nitrogen-doped ZnSe molecular beam epitaxy (MBE) layer with the highest net acceptor concentration (NA-ND) of 1.2×1018 cm−3 was obtained using a high-power rf plasma source. Even at this high NA-ND value, a 4.2 K photoluminescence spectrum shows bound exciton emission and deep donor–acceptor pair emission with well-resolved phonon replicas. The high activation in nitrogen doping could be ascribed to the generation of the predominant atomic nitrogen and to the suppressed extraction of nitrogen ions and excited neutral nitrogen molecules due to the structure of the orifice placed between the MBE growth chamber and the plasma discharge tube of the high-power plasma source. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119733
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