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  • 1
    Electronic Resource
    Electronic Resource
    Effects of hydrostatic pressure on dopant diffusion in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3664-3670 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A point-defect-based model for the stress effects on dopant diffusion in silicon is presented. Variations in binding energies and diffusivities of dopant-defect pairs under hydrostatic pressure are modeled, and a pressure-dependent dopant diffusion equation is derived. New experimental work was performed on boron pileup near dislocation loops, and compared to the model. Qualitative agreement is possible, which suggests that stress might be a significant effect in scaled modern device structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359944
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of dose rate on interstitial release from the end-of-range implant damage region in silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature molecular beam epitaxy was used to grow boron doping superlattices DSLs in Si, with peak boron concentrations of 1×1018/cm3, and spike widths of 10 nm. Amorphization of these DSLs was achieved using a series of Si + implants of 30 and 112 keV, each at a dose of 1×1015/cm2, which placed the amorphous to crystalline interface between the first and second doping spikes. The dose rate of the Si + implants was varied from 0.13 to 1.13 mA/cm2. Post-implantation anneals were performed in a rapid thermal annealing furnace at 800 °C, for times varying from 5 s to 3 min. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Increasing the implant dose rate appears to increase the amount interstitial flux toward the surface but has no observable effect on the flux into the crystal. Transmission electron microscopy was used to study the end of range defect evolution. Increasing dose rate was observed to decrease the end of range defect density. These observations are consistent with previous findings that indicate the amount of backflow toward the surface decreases as the end of range loop density increases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120260
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  • 3
    Electronic Resource
    Electronic Resource
    Diffusion of implanted nitrogen in silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2282-2284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2〈sup ARRANGE="STAGGER"〉+ at a dose of 5×1013 ions/cm2 at 40 and 200 keV through a 50 Å screen oxide into Czochralski silicon wafers. Furnace anneals at a range of temperatures from 650 to 1050 °C have revealed anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/silicon-oxide interface. Qualitative modeling of this behavior is also discussed in terms of the time taken to create a mobile nitrogen interstitial through the kickout, Frenkel pair, and the dissociative mechanisms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372173
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced elimination of implantation damage upon exceeding the solid solubility (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4114-4117 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of silicon wafers with Ga and P, under specific conditions, results in enhanced category-II (end of range) dislocation loop elimination after short thermal cycling. Comparison of these results with transmission electron microscopy studies of Si-, Ge-, As-, Al-, and Sb-implanted samples indicate that the enhanced elimination process occurs only when the peak of the impurity concentration exceeds the solid solubility of the impurity in silicon at the annealing temperature and the resulting precipitates are dissolving. The activation energy for enhanced elimination of these extrinsic catetory-II dislocation loops is shown to be 5±0.5 eV. It is proposed that vacancy emission by the dissolving precipitates is responsible for the enhanced elimination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339126
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  • 5
    Electronic Resource
    Electronic Resource
    Ion implantation of boron in germanium (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2469-2477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation of boron implanted at room temperature into germanium has been studied. In sharp contrast to all other group III elements boron forms a p-type layer before any postimplant annealing steps. Variable temperature Hall effect measurements and deep level transient spectroscopy experiments indicate that all of the boron ions are electrically active as shallow acceptor centers over the entire dose range (5×1011/cm2 to 1×1014/cm2) and energy range (25–100 keV) investigated, without any postimplant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow accepted centers concentration for low-energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (〈1×1012/cm2). Three damage related hole traps are produced by ion implantation of 11B+. Two of these hole traps have also been observed in γ-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (〈300 °C). Room-temperature implantation of BF+2 into Ge, does not lead to substitutionally active boron without annealing. A thermal cycle of 350 °C for 30 min activates 100% of the boron.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337918
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of implantation-induced dislocation loops and interstitials in silicon is studied. Experiments under dry oxidation conditions consistently show a significant reduction of OED (oxidation enhanced diffusion) of boron in a buried layer due to very efficient interstitial capturing action of dislocation loops, suggesting diffusion-limited dislocation loop growth. Simple analytic solution of interstitial supersaturation and analysis of the data in terms of time dependence of the OED suppression demonstrate that the interaction of dislocation loops and interstitials is not a reaction-limited but a diffusion-limited process. Simulations incorporating the model for the interaction mechanism agree with both secondary ion mass spectroscopy and transmission electron spectroscopy data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112325
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of arsenic doping on {311} defect dissolution in silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 229-231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si+ ions were implanted into silicon wafers with background concentrations of arsenic ranging from 1×1017 to 3×1019 cm−3 to study the interaction between arsenic atoms and excess self-interstitials. Samples were then annealed at 750 °C for a range of times between 15 and 60 min to nucleate and dissolve {311} defects. The concentration of trapped interstitials in these defects was measured using quantitative plan-view transmission electron microscopy. It is shown that, as the arsenic concentration increases, there is a reduction in the number and size of the {311} defects. This decrease in the {311} defect density with increasing arsenic well concentration is believed to be the result of interstitial trapping by the arsenic. Upon annealing, the trapped interstitial concentration in the {311} defects decreases as the defects dissolve. The time constant for the dissolution was calculated to be 33±5 min at 750 °C, and was independent of background concentration. This suggests that the arsenic traps some of the interstitials, and these traps are sufficiently stable that they do not affect the subsequent {311} dissolution at 750 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124331
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  • 8
    Electronic Resource
    Electronic Resource
    Cross-sectional transmission electron microscopy analysis of {311} defects from Si implantation into silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2547-2549 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient enhanced diffusion (TED) below the amorphization dose threshold is thought to be caused by the release of interstitials from {311} defects. The interstitials are annihilated by diffusion to and then recombination with the surface of the wafer. This would suggest that the layer of {311} defects formed from an implantation and anneal would dissolve from the surface down. Cross-section transmission electron microscopy (TEM) was used to investigate this hypothesis. It is shown that the {311} defects dissolve uniformly across the layer, and the width of the layer does not change until the {311} defects nearly completely dissolve. The total population was also measured using plan-view TEM, so that the dissolution and distribution functions could be plotted from the same annealing conditions. These data suggest that surface is not the limiting factor in the interstitial removal from {311} defects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120623
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  • 9
    Electronic Resource
    Electronic Resource
    {311} defects in silicon: The source of the loops (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3748-3750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The annealing kinetics of extended defects in Si+-implanted Si have been investigated by in situ annealing plan-view transmission electron microscopy (TEM) samples in a TEM. A 〈100〉 Czochralski-grown silicon wafer was implanted with 100 keV Si+ at the subamorphizing dose of 2×1014 cm−2. Following implantation, the effect of annealing of 800 °C was studied by in situ annealing. After 5 min of annealing at 800 °C, a dense collection of both {311} defects (3×1011/cm2) and small subthreshold dislocation loops (1×1011/cm2) were observed. Upon subsequent annealing, the {311} defect density decreased rapidly and the loop density increased. The evolution of approximately 500 {311} defects could be followed as a function of annealing time. The unfaulting of a {311} defect was observed to be the source of every subthreshold loop observed to from (about 150 loops in the monitored region). After the initial 5 min anneal at 800 °C, the probability of a {311} unfaulting into a loop was about 50%. Based on these observations, it is concluded that unfaulting of the {311} defects is the source of the subthreshold dislocation loops in nonamorphized ion-implanted silicon. 70% of the loops formed were determined to have a Burgers vector of a/3〈111〉, while 30% were perfect with a Burgers vector of a/2〈110〉. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122882
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  • 10
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion after laser thermal processing of ion implanted silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3659-3661 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) of boron was investigated. A 270-Å-thick amorphous layer formed by 10 keV Si+ implantation was melted and regrown using a 20 ns ultraviolet laser pulse. Transmission electron microscopy revealed that recrystallization of the amorphous layer following LTP results in a high concentration of stacking faults and microtwins in the regrown region. Also, the end-of-range loop evolution during subsequent 750 °C furnace annealing, is different in a LTP sample compared to a control sample. Secondary ion mass spectroscopy of a boron marker layer 6000 Å below the surface showed that LTP alone produced no enhanced diffusion. However, during subsequent furnace annealing, the boron layer in the LTP sample experienced just as much TED as in the control sample which was only implanted and furnace annealed. These results imply that laser melting and recrystallization of an implantation-induced amorphous layer does not measurably reduce the excess interstitials released from the end-of-range implant damage. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125420
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