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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of low-temperature polycrystalline silicon growth from a SiF4/SiH4/H2 plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 646-652 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the low-temperature growth of poly-Si by plasma-enhanced chemical-vapor deposition using SiF4/SiH4/H2 gases is presented. The model is based on the existing so-called etching model in which growth and etching take place simultaneously. In this model a set of chemical reactions are postulated. The crucial factors to obtain high-quality poly-Si films are (1) the flux of precursors, (2) the concentration of F radicals in the vicinity of the growing surface which determines the etching rate, and (3) the H-covered surface which ensures long diffusion length of precursors. The flow rate of SiH4 [factor (1)] determines whether the film becomes crystalline or amorphous, and variation in the other gas flow rates and plasma parameters affect factors (2) and (3). According to the model the electrode spacing and rf power predominantly determine the concentration of F radicals diffused to the growing surface, while the gas pressure changes the residence time of radicals which predominantly affects the etching reaction. Natural consequences of the model are that an excess supply of F radicals will in turn deteriorate the crystallinity by stripping the hydrogen covering the surface and increasing nucleation sites. The crystallinity of poly-Si films prepared by changing the above plasma parameters are characterized by x-ray diffraction, and their dependence on the above parameters are found to be consistent with the model. A high degree of hydrogen exchange between the growing surface and the plasma is observed by secondary-ion-mass spectroscopy for the film prepared with SiF4/SiH4/D2 gases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359586
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  • 2
    Electronic Resource
    Electronic Resource
    Broad photoluminescence band in undoped AlxGa1−xAs grown by organometallic vapor phase epitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7533-7539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the 77 K photoluminescence (PL) of undoped-AlxGa1−xAs (0.21≤x≤0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.6–1.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at around x=0.5. Its large full width at half-maximum (∼200 meV) suggests that this emission originates from some impurity-defect complex. The Si- and C-doping dependencies of the PL reveal that the emission disappears in Si-doped n-type samples while it increases in intensity superlinearly with the hole concentration, thus, the emission center is C acceptor related. Furthermore, annealing Al0.52Ga0.48As samples in H2 flow eliminates the emission, while annealing in AsH3 flow increases the emission. Based on these results, we have considered the doping and V/III dependencies of various major point defects present in p-type GaAs and those of the combinations of the C acceptor and these defects. It is concluded that the DB band originates from the substitutional C–As antisite complex (CAs–AsGa). Mass-action rule analysis of the complex deduces a quadratic increase in the PL intensity with hole concentration, which generally explains the experimental results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365296
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: "Dark discharge in hydrogenated amorphous silicon photoreceptors'' [J. Appl. Phys. 62, 1837 (1987)] (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1252-1252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341181
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  • 4
    Electronic Resource
    Electronic Resource
    Intrinsic stress and hydrogen bonding in glow-discharge amorphous silicon films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3110-3115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found a strong correlation between intrinsic stress and hydrogen bonding in glow-discharge amorphous silicon (a-Si:H) films. The stress of high-deposition-rate (HDR) films continuously changes from tensile to compressive with increasing rf power. In contrast, low-deposition-rate (LDR) films indicated compressive stress in all the rf power range which was varied. However, adding a small amount of Ar to SiH4 in the LDR film deposition changes its stress from compressive to tensile as in the HDR films. IR absorption spectroscopies showed that films with compressive stress always indicated a smaller ratio of absorptions at 2070 and 2000 cm−1 α(2070)/α(2000) than the value Rc(=0.9–1.2), whereas those with tensile stress showed a larger ratio. Consequently, zero or very weak stress is reached at the ratio approximately equal to Rc, regardless of varying deposition parameters. It is also shown that annealing alters the stress of all the HDR films to strong tensile, and that α(2070)/α(2000) decreases, differing from the correlation where the rf power and Ar mixing ratio are varied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336887
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  • 5
    Electronic Resource
    Electronic Resource
    Density-of-states determination of amorphous silicon from space-charge-limited photocurrents (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 558-560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density-of-states around midgap g(E) of undoped amorphous silicon (a-Si:H) has been determined by measuring the space-charge-limited photocurrent (SCLPC) of a-Si:H Schottky diodes under blue light (λ=450 nm) illumination. In this novel technique, a single type of photogenerated carrier is utilized as the source of space charge to dispense with highly doped layers required in the conventional space-charge-limited current (SCLC) technique. Conditions for the uniform formation of space charge are discussed and checked by the satisfaction of a scaling law for samples with different thicknesses. The g(E) deduced from the SCLPC is found to be similar to that from the SCLC technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346086
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of low-level boron doping on the photocurrent of amorphous silicon Schottky photodiodes (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2307-2312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the photocurrent-electric field (Jph-F) characteristics of slightly boron (B) doped (0≤[B2H6]/[SiH4]≤10 ppm) amorphous silicon (a-Si:H) Schottky photodiodes with a configuration of Cr/a-Si:H/ITO. The measurements were performed with different bias directions and two light wavelengths (555 and 660 nm), and mobility-lifetime (μτ) products were deduced by two methods. One is by fitting the experimental plots to the theoretical curves developed by Crandall [Semiconductors and Semimetals (Academic, Orlando, FL, 1984), Vol. 21, Pt. B, p. 245.]. The other is a new one we have proposed where the transition electric field Ftr, at which Jph changes from space-charge-limited current to the theoretical curve given by Crandall, is applied to the relationship μτFtr=L, where L is the thickness of a-Si:H. It was found that the former method is applicable only where a-Si:H is homogeneously illuminated and no space charge is formed. On the other hand, the latter method is effective where a-Si:H is inhomogeneously illuminated and a space charge is formed in the carrier transit region. The μhτh deduced by the latter method increased from 2×10−9 to 3×10−8 cm2/V when the B-doping ratio was increased from 0 to 3 ppm, but remained nearly constant with further doping. In contrast, μeτe monotonically decreased from 2×10−8 to 2×10−9 cm2/V with increased doping. The (μτ)fit deduced by the former method coincides with the μhτh at doping ratios higher than 3 ppm, but did not at lower doping ratios probably because of a space-charge formation by deep hole trapping and incomplete homogeneous illumination. These changes in μτ are discussed microscopically in terms of the charge state of the dangling bond state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342845
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  • 7
    Electronic Resource
    Electronic Resource
    Amorphous carbon coating on amorphous silicon photoreceptors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4679-4681 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard hydrogenated amorphous carbon (a-C:H) films were coated on amorphous silicon photoreceptors by the plasma decomposition of acetylene (C2H2). This overlayer proved to be a much better protective layer for the adsorption of external species compared to an a-SiNx or a-Si1−xCx overcoating layer, and the image degradation induced by such adsorption was considerably reduced. The highly protective properties were attributed to the hydrophobic nature of C–Hn (n=1–3) and C–C bonds contained in the a-C:H film. The optical properties of the a-C:H films are also described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338379
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation of p-type silicon films by plasma decomposition of a SiH4/H2/BF3 gas mixture (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4614-4619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-Type microcrystalline Si films have been prepared by rf decomposition of SiH4/H2/BF3 gases. The gas composition, substrate temperature, and rf power dependence of film conductivity σ are investigated. The σ increases with increasing BF3 and saturates or takes a maximum at [BF3]/[SiH4]∼1. A fairly high σ value of ∼1.2×10−2 S/cm is obtained for the low rf power (∼0.1 W/cm2). Increasing rf power decreases σ, which is in contrast to the SiH4/H2/B2H6 system. The incorporation rate of boron from gas phase into the film is found to be low (∼4%) by use of secondary ion mass spectroscopy. Increasing hydrogen increases σ. Temperature is found to be the most effective deposition parameter. The σ monotonically increases with an increase of substrate temperature TS. Transmission electron microscopy observation shows that films with higher σ contain higher density or larger size Si crystallites. The crystalline size increases by a short time (≤15 min) annealing at 400 °C. The deposition parameter dependence of σ in comparison to the SiH4/H2/B2H6 system is discussed. The low temperature annealing effect is discussed in terms of film structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354380
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  • 9
    Electronic Resource
    Electronic Resource
    Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7374-7381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evolution with thickness of the structure of the polycrystalline silicon (poly-Si) films prepared at 300 °C has been studied by plasma decomposition of SiF4/SiH4/H2 source gases. The poly-Si films with varied thickness are characterized mainly by Raman spectroscopy, x-ray diffraction (XRD), and supplementarily by reflection high-energy electron diffraction, transmission electron microscopy, Fourier-transform infrared (FT-IR) spectroscopy, electron-spin resonance (ESR), and secondary-ion-mass spectroscopy (SIMS) measurements. The crystalline fraction of the film was calculated to be 87% by deconvoluting the Raman spectra. The grains indicated a strong 〈110〉 preferred orientation by XRD. The thickness (d) dependence of the diffracted (220) intensity is divided into three regions: an incubation region (d〈200 nm, region 1), a linear region (200 nm ≤d〈300–500 nm, region 2) where the deposition parameter (SiF4 flow rate, substrate temperature, and rf power) dependence is weak, and a linear region with steeper (or more moderate) slopes (300–500 nm≤d, region 3) where the deposition parameter dependence is large. The measurements of the angular distribution of the 〈110〉 grains reveal that they contain slanting ones by more than 4° in region 2, while they disappear in region 3. The FT-IR and SIMS measurements for typical samples (Ts = 300 °C, 300 Pa) indicate that the grain boundaries are passivated by hydrogen in the bonding configurations of Si—Hn (n=1–3) and its concentration is approximately 3 at. %. The residual fluorine in the film is found to be much fewer (6×1019 cm−3) than hydrogen. It is found that the density of unpassivated dangling bonds indicates a low value of 1.1×1017 cm−3 for the film with d=280 nm by ESR measurements. The origin of the preferred orientation is also discussed on the basis of a model in which nucleation, ledge formation, and etching processes are considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349732
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  • 10
    Electronic Resource
    Electronic Resource
    Dark discharge in hydrogenated amorphous silicon photoreceptors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1837-1841 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electric field, thickness, and temperature dependencies of dark discharge in corona-charged glow-discharge amorphous silicon (a-Si:H) films. Dark discharge is a basic property for image devices such as photoreceptors. The dark-discharge rate ||dV/dt|| is found to be proportional to the square root of the electric field E as in the form log||dV/dt||∝(square root of)E, and increases nearly proportionally to the thickness of the a-Si:H film, indicating a bulk emission of charges from barriers lowered by electric fields like the Poole–Frenkel emission. It was also found that the contribution of electron injection from the substrate increases significantly in the dark discharge for small film thicknesses. The temperature dependence of dark discharge revealed the barrier height to be approximately 0.9 eV. A discharge mechanism was considered on the basis of these results, and was compared to that of other conventional materials for photoreceptors such as a-Se and a-As2Se3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339566
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