Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 5651-5653
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dielectric breakdown characteristics of thermal silicon dioxide has been qualitatively and quantitatively correlated with grown-in and thermally induced defects in Czochralski silicon wafers. It is shown that grown-in latent stacking faults and SiO2 precipitates have little effect on oxide integrity, but stacking faults without any involvement of metallic impurities greatly degrade oxide integrity. Although more stacking faults can result in poorer oxide integrity, the correlation between oxide breakdown degradation and stacking fault density is not straightforward.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343680
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |