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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4238-4241 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam-assisted deposition of Ni on p-InP (100) at room temperature was performed in order to produce Ni thin films with high quality and Ni/p-InP (100) heterostructures with abrupt heterointerfaces. An atomic force microscopy image showed that the root mean square of the average surface roughness of the Ni film was 21.3 Å, and x-ray diffraction and transmission electron microscopy (TEM) measurements show that Ni film layers grown on InP (100) substrates were polycrystalline. Auger electron spectroscopy and TEM measurements showed that Ni films grown on p-InP (100) substrates at room temperature had no significant interdiffusion problems. The work function of the Ni thin film was determined from the secondary electron emission coefficients obtained with a focused ion beam. These results provide important information on the microstructural and electronic properties for Ni thin films grown on p-InP (100) substrates at room temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity and ion density of a plasma channel induced by a mildly relativistic electron beam (300 kV, ∼2 kA, 10–50 ns) have been experimentally investigated under various gas pressures. Pressures of filling gas (air) in this experiment ranged from 10 mTorr to 100 mTorr. The net currents of the beam-induced plasma channel were measured by four Rogowski coils located along the propagating region, while the electron beam currents were measured by a Faraday cup. The inductive plasma currents observed at the above pressure regimes have been characterized by magnetic decay time. Plasma-channel conductivity and ion density induced by the beam are measured along the propagating axial positions under various gas pressures. The numerical result of the ion density is also obtained at the charge neutralization time when the ion density is just the same as the electron beam density, and the digitizing experimental data of the beam current Ib(t) and voltage Vd(t) have been used. As expected, in both numerical and experimental results the ion density increases to a peak value of about 3.0×1011 cm−3 and 3.3×1011 cm−3, respectively, at 50 mTorr and slowly decreases for both cases as the gas pressure increases from 50 mTorr to 100 mTorr. Moreover, the results of ion density predicted by the theoretical model developed here are also found to be in remarkably good agreement with experimental and numerical results at pressure regimes from 10 mTorr to 100 mTorr. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 4105-4113 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for energy spread and shift of peak energy distribution in a charged particle beam is developed. The beam may expand radially and axially as it propagates downstream. Charged particles placed randomly in the beam possess different potentials, which are converted to different kinetic energies as the beam propagates and expands. This randomness introduces energy spread in the beam. It is also shown that the shift of peak energy distribution in beam particles is proportional to the one-third power of the beam current, which is the manifestation of random particle locations. The theoretical predictions of the energy-distribution shift agree remarkably well with experimental data. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2168-2170 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A focused-ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to fabricate a single-electron transistor (SET) that can operate at room temperature. The results for the drain current as a function of the gate voltage at different source voltages at room temperature clearly show Coulomb oscillations indicative of Coulomb-blockade effects. These results indicate that SETs operating at room temperature, fabricated utilizing the FIB technique, hold promise for potential applications in ultra-high-density memory devices. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 120-122 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Ga+ focused ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to create nanocrystals acting as Coulomb islands at room temperature. High-resolution transmission electron microscopy results show that the nanocrystals acting as Coulomb islands are created in the source-drain active layer by using a Ga+ FIB. The results for the drain current and the conductance as functions of the drain voltage with an open gate voltage at room temperature show a Coulomb staircase and conductance oscillations, respectively. Nanoscale particles of Al with an amorphous phase are created in the source-drain channel by the defects due to the radiation effect of the Ga+ FIB, and collisions between Ga+ ions and Al atoms produce secondary electrons, that interact with the nanoparticles, which are acting as Coulomb islands, to form the crystal phase. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1036-1038 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al two-terminal diodes were fabricated on a basis of an artificial pattern formation method using focused ion-beam (FIB) techniques. The results of current–voltage and conductance–voltage measurements at room temperature showed the Coulomb staircase and the Coulomb blockade effects, respectively. The Coulomb blockade effects originate from the many nanoparticles created by the defects due to the Ga+ ion beam. These results indicate that Al two-terminal diodes fabricated by using the FIB system hold promise for potential applications in single-electron transistors operating at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Biochimica et Biophysica Acta (BBA)/Protein Structure and Molecular 1163 (1993), S. 158-164 
    ISSN: 0167-4838
    Keywords: (P ostreatus) ; EPR ; Glycosylation ; High-spin ferric state ; Peroxidase ; Phenolic compound ; Protoporphyrin IX
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Medicine
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of industrial microbiology and biotechnology 17 (1996), S. 205-213 
    ISSN: 1476-5535
    Keywords: mycolata ; suprageneric classification ; rRNA sequencing ; chemotaxonomy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Almost-complete 16S rRNA sequences of 32 representatives of the generaCorynebacterium, Gordona, Mycobacterium, Nocardia, Rhodococcus, Tsukamurella andTuricella were examined using the neighbor-joining, Fitch-Margoliash, maximum parsimony and maximum likelihood methods in order to clarify the suprageneric relationships of these taxa. The topology of the resultant phylogenetic trees was only marginally affected by the use of the different algorithms. Several outgroup strains were used to try and establish the position of the root in the mycolata evolutionary tree. Most of the outgroup strains gave estimates of root positions that proved to be inconsistent when the different tree-making algorithms were used. However it was possible to assign the test strains to two suprageneric lineages the members of which can be distinguished using chemical markers. The familyCorynebacteriaceae encompasses the generaCorynebacterium, Dietzia andTuricella and the familyMycobacteriaceae, the generaGordona, Mycobacterium, Nocardia, Rhodococcus andTsukamurella. Nocardia pinensis formed a distinct clade that was most closely related to theGordona lineage. Emended descriptions are given of the two suprageneric taxa.
    Type of Medium: Electronic Resource
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