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  • 1
    Electronic Resource
    Electronic Resource
    Fluorine-implanted bismuth oxide superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 570-571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the influence of fluorine implantation in the Bi-Sr-Ca-Cu-O system. The incorporation of fluorine was found to enhance the zero resistance temperature and to sharpen the high-temperature transition. The fluorinated sample exhibited Tc (R=0)=89 K and the high Tc phase of the composition had Tc (on) as high as 124 K with an extrapolated Tc (end) of 114 K. Resistance temperature characteristics of a sample before and after fluorine implantation are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101459
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Y-Ba-Cu-O superconducting film on oxidized silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1987-1988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99743
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A design criterion to ameliorate ohmic contact to n-GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4694-4696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A metal n+-n semiconductor structure is ohmic for a n+ region larger than metal semiconductor (M-S) barrier width. However, if the undepleted n+ region is too thick, the electrons tunneling across the M-S junction lose energy during transit and may not retain sufficient energy to surmount the n+-n barrier. The high–low junction thus impedes the carrier motion and adds to the contact resistance of the structure. In the present study, carrier energy loss mechanisms are considered to determine the distance hot electrons travel before losing too much energy to overcome the barrier. The results provide the optimum length of the interfacial n+ layer to ameliorate ohmic contact to n-GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338383
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    On dose correction in electron beam lithography (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 421-423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ideal proximity exposure compensation is shown to occur when the dose correction factors are obtained by considering the electron energy dissipation distribution at the lowest plane in the resist. In such an ideal situation, the simulation of resist profiles in line patterns shows that the resist edge slope becomes nearly equal to what can be obtained with a single beam line.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341445
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of fluorine-ion implantation on buried nitride silicon-on-insulator structures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 492-494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effect of fluorine-ion (19F+) implantation on the buried silicon nitride silicon-on-insulator (SOI) structures was investigated. Fluorine was introduced before and after the synthesis of buried Si3N4 layers in silicon by high-dose nitrogen ion (14N+) implantation. Infrared transmission spectropscopy and glancing angle x-ray diffraction studies show that 19F+ implantation before SOI synthesis inhibits the growth of larger-size polycrystalline Si3N4 grains, whereas after the synthesis it removes undesired polycrystalline silicon and helps to obtain larger-grain-size α-polycrystalline silicon nitride in few preferred planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106646
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  • 6
    Electronic Resource
    Electronic Resource
    Window size effect on lateral growth of nickel silicide (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1190-1194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Window size effect on lateral growth of nickel silicide in contact windows cut into oxide grown on Si (100) is studied. The growth rate is found to be independent of window size and follows the diffusion-limited process with activation energy of 1.5 eV. The Si erosions are observed to grow due to predominant Si diffusion for vacuum anneal above 600 °C. This phenomenon becomes greatly pronounced with fine windows of 2 μm in diameter. We attribute this to (i) an enhanced stress level in fine windows causing reduction in the growth temperature of epitaxial NiSi2 in the windows and (ii) difference in surface energies of epitaxial NiSi2 formed and the Si substrate resulting in the shrinkage of the epitaxial NiSi2 dimension in the window. No such behavior is observed under identical conditions when Si (111) is used. We believe this is due to the fact that the lateral growth of nickel silicide in this case is about a quarter of that for Ni-Si (100) lateral samples. Finally the technological importance of this study is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343461
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    Paper (German National Licenses)
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