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  • 1
    Electronic Resource
    Electronic Resource
    Temperature-dependent critical layer thickness for strained-layer heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2212-2214 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We systematically analyze the stress-strain-temperature relationships and include thermal strain contributions to the misfit-strain only formalism of strained-layer heterostructures. Application of this theory to the GexSi1−x/Si (100) and InxGa1−xAs/GaAs (100) system demonstrates that the thermal effect lowers the critical layer thickness significantly on both systems, in excellent agreement with experimentally measured values. Empirical formulae of the critical layer thickness in terms of a mole fraction and temperature for these systems are provided. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115106
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  • 2
    Electronic Resource
    Electronic Resource
    Substrate imposed stress-strain effect on photoluminescence in hydrogenated amorphous silicon alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3007-3009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon films were deposited on the unstrained and strained Si substrates by an electron cyclotron resonance plasma source. The photoluminescence spectra show that emission energies are different from each other. The redshift of photoluminescence induced by the biaxial tensile stress is increased with decreasing the temperature in the range of 0.11–0.17 eV. The stress effect also enhances the quantum efficiency significantly. The pseudomorphic growth of Si on a relaxed Si0.75Ge0.25 (100) surface provides the strain energy of about 0.17 eV. These comparable results indicate that the shift of emission energy is attributed to the stress effect perturbing the polysilane structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120245
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature visible photoluminescence from silicon-rich oxide layers deposited by an electron cyclotron resonance plasma source (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3908-3910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly split, visible light emissions at room temperature were observed in the range from 335 to 650 nm in silicon-rich oxide films deposited in the plasma phase of a mixture of silane and oxygen. The mechanism of the light emissions is classified into two categories. The photoluminescence bands at both 365 and 469 nm are related to the intrinsic defects of the E′ center and the neutral oxygen vacancy, respectively. However, the relatively sharp peaks at 403 and 535 nm are correlated with the development of polycrystalline core of Si-enriched parts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117566
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1767-1769 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal quenching of an infrared deep level of 1.2–1.5 eV has been investigated on Mg-doped p-type GaN films, using one- and two-step annealing processes and photocurrent measurements. The deep level appeared in the one-step annealing process at a relatively high temperature of 900 °C, but disappeared in the two-step annealing process with a low-temperature step and a subsequent high-temperature step. The persistent photocurrent was residual in the sample including the deep level, while it was terminated in the sample without the deep level. This indicates that the deep level is a neutral hole center located above a quasi-Fermi level, estimated with an energy of EpF=0.1–0.15 eV above the valence band at a hole carrier concentration of 2.0–2.5×1017/cm3. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456547
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  • 5
    Electronic Resource
    Electronic Resource
    Solid-state interdiffusion mechanism in strained Si1–xGex/Si heterostructures (1997)
    Springer
    Journal of solid state electrochemistry 1 (1997), S. 221-226 
    Details
    ISSN: 1433-0768
    Keywords: Key words SiGe heterointerface ; Thermal interdiffusion ; Dislocation ; DCXD ; MBE growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The interdiffusion in a low-strained Si0.93Ge0.07/Si epilayer was analyzed by double-crystal X-ray diffraction. The interdiffusion was characterized by a low diffusion barrier of 1.81 eV with a diffusion constant of 4.3 × 10−5 cm2/sec, which indicates correlation with the stacking fault generated by the homoepitaxial growth of the Si layer prior to the growth of the strained SiGe layer. At the very low-strained layer, the driving force causing the interdiffusion is the concentration gradient, and the mechanism is self-diffusion of Si. Furthermore, the interdiffusion mechanisms were classified into three groups, depending on the Ge mole fraction x. For x 〈 0.2, the diffusion process in the SiGe alloy is similar to a self-diffusion of Si atoms, while, for 0.2 〈 x 〈 0.4, Ge atoms prefer to be diffused out from the alloy. Finally, for x 〉 0.4, Si atoms can be diffused into the alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100080050052
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  • 6
    Electronic Resource
    Electronic Resource
    Point-defect associated thermionic hole emissions from p-type Si/Si 1 − x Ge x /Si quantum well structures (1999)
    Springer
    Journal of solid state electrochemistry 3 (1999), S. 417-423 
    Details
    ISSN: 1433-0768
    Keywords: Key words SiGe quantum well ; Hole emission ; Point defect ; Molecular beam epitaxy growth ; Deep level transient spectroscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The thermionic hole emissions from a p-type Si0.67Ge0.33 quantum well with a width of 7 nm and a point defect were investigated using deep level transient spectroscopy. An activation energy of 0.22 eV from the quantum well is consistent with the heavy hole level from the bottom of the well. The defect-related band with an energy of 0.30 eV originated from the space charge related to the point defect in the vicinity of the quantum well heterostructure. The origin of the point-defect-related band was confirmed by photoluminescence and the deep level was further clarified by using capacitance-voltage measurements and simulation by introducing a simple model of an interfacial hole trap center. The deep hole trap center apparently disappeared by an annealing effect, indicating that point defects are subject to thermal annealing. The microscopic measurement provides evidence on point defects in the quantum well structure and the thermal annealing also enhances the thermionic hole emission from the quantum well structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100080050176
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