ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The stability of high quantum efficiency, porous silicon (PS) electroluminescent (EL) diodes have been analyzed under pulsed operation. The results show that EL exhausting is due to a charging of the PS network which recovery is thermally activated (Er∼0.4 eV). This suggests a charge trapping mechanism at larger crystallites with low bandgap, inhibiting further injection of carriers. Also, forward current is found to be thermally activated, however, with a distinctly lower activation energy (Ej∼0.1–0.2 eV), possibly related to jumping of carriers over barriers between nearby crystallites. Finally, high current densities may lead to thermal runaway causing permanent damage to the structure. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117907
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