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1

Digitale Medien

Thermal oxidation of amorphous ternary Ta36Si14N50 thin films (1991)

Pokela, P. J. ; Reid, J. S. ; Kwok, C.-K. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 2828-2832

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The oxidation kinetics of reactively sputtered amorphous Ta36Si14N50 thin films are studied in dry and wet ambient in the temperature range of 650–850 °C by backscattering spectrometry, Dektak profilometer, and x-ray diffraction analyses. The dry oxidation is well described by a parabolic time dependence which corresponds to a process controlled by the diffusion of the oxidant in the oxide. The growth of the oxide in wet ambient is initially very rapid and then proceeds linearly which means that the process is reaction limited. Both oxidation rates are thermally activated. The activation energies are 2.0 eV for dry and 1.4 eV for wet ambient. The pre-exponential factors are 0.17×1016 A(ring)2/min and 7.4×108 A(ring)/min, respectively. Both the dry and wet oxidation of the amorphous ternary Ta36Si14N50 film result in the formation of an x-ray amorphous Ta14Si5.5O80 layer.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349345

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2

Digitale Medien

Thermal oxidation of reactively sputtered amorphous W80N20 films (1990)

Vu, Q. T. ; Pokela, P. J. ; Garden, C. L. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 6420-6423

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The oxidation behavior of reactively sputtered amorphous tungsten nitride of composition W80N20 was investigated in dry and wet oxidizing ambient in the temperature range of 450 °C–575 °C. A single WO3 oxide phase is observed. The growth of the oxide follows a parabolic time dependence which is attributed to a process controlled by the diffusivity of the oxidant in the oxide. The oxidation process is thermally activated with an activation energy of 2.5±0.05 eV for dry ambient and 2.35±0.05 eV for wet ambient. The pre-exponential factor of the reaction constant for dry ambient is 1.1×1021 A(ring)2/min; that for wet ambient is only about 10 times less and is equal to 1.3×1020 A(ring)2/min.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.346863

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3

Digitale Medien

Tantalum-based diffusion barriers in Si/Cu VLSI metallizations (1991)

Kolawa, E. ; Chen, J. S. ; Reid, J. S. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 1369-1373

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have studied sputter-deposited Ta, Ta36Si14, and Ta36Si14N50 thin films as diffusion barriers between Cu overlayers and Si substrates. Electrical measurements on Si n+p shallow junction diodes demonstrate that a 180-nm-thick Ta film is not an effective diffusion barrier. For the standard test of 30-min annealing in vacuum applied in the present study, the Ta barrier fails after annealing at 500 °C. An amorphous Ta74Si26 thin film improves the performance by raising the failure temperature of a 〈Si〉/Ta74Si26(100 nm)/Cu(500 nm) metallization to 650 °C. Unparalled results are obtained with an amorphous ternary Ta36Si14N50 thin film in the Si/Ta36Si14N50(120 nm)/Cu(500 nm) and in the Si/TiSi2(30 nm)/Ta36SiN50(80 nm)/Cu(500 nm) metallization that break down only after annealing at 900 °C. The failure is induced by a premature crystallization of the Ta36Si14N50 alloy (whose crystallization temperature exceeds 1000 °C) when in contact with copper.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349594

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4

Digitale Medien

Reactively sputtered Ru–Si–O films (1999)

Gasser, S. M. ; Kolawa, E. ; Nicolet, M.-A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 1974-1981

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Films of Ru–Si–O were synthesized by reactively sputtering a Ru1Si1 target in an Ar/O2 gas mixture. They were characterized in terms of their composition by 2.0 MeV 4He++ backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. The compositions indicate preferential sputtering with ruthenium enrichment of the films, and a saturation level of oxygen is determined at 67 at. % corresponding to the formation of SiO2 and RuO2. X-ray diffraction spectra reveal an amorphous structure for oxygen-saturated and nanocrystals for unsaturated as-deposited films. The crystallization temperature clearly increases with the oxygen concentration of the films, from 500 °C for oxygen-free films to 1000 °C for oxygen-saturated films, when annealed in vacuum for 30 min. Transmission electron micrographs of as-deposited oxygen-saturated films show few nanocrystals of 1–2 nm in diameter in an otherwise amorphous matrix. The atomic density is roughly 8×1022 atom/cm3 for all compositions. The resistivity of the ternary alloys scales with the terminal phases in the ternary phase diagram and reaches a maximum value when the Ru–SiO2 tie line is crossed near 50 at. % oxygen. The films are stable in vacuum up to thermal stressing at 800 °C for 5 h, and their decomposition starts near 1000 °C. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370996

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5

Digitale Medien

Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations (1996)

Reid, J. S. ; Kolawa, E. ; Garland, C. M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 1109-1115

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He++ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.360909

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6

Digitale Medien

Ohmic contacts to n-GaAs with a Pt/Ge/Au contacting layer and a Ta-Si-N barrier: Electrical and metallurgical characteristics (1994)

Chen, J. S. ; Kolawa, E. ; Nicolet, M.-A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 7373-7381

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Pt/Ge/Au trilayers of various Pt:Ge compositions, overlaid with a Ta-Si-N barrier layer and an Au metallization layer, are investigated as ohmic contacts to n-type GaAs. After annealing in flowing argon at 450 °C for 15 min, a contact resistivity of 3.7×10−6 Ω cm2 is obtained for the sample of atomic ratio Pt/Ge=1. The contact resistivity of this sample degrades only slightly to 5.0×10−6 Ω cm2 upon aging at 450 °C for 60 h, while the surface stays smooth. Contact resistivities of samples with other Pt/Ge atomic ratios are in the range of 10−5–10−4 Ω cm2. To understand this electrical behavior, the contacts are characterized by backscattering spectrometry, x-ray diffraction, and transmission electron microscopy in conjunction with energy-dispersive analysis of x rays. The reaction products vary with the Pt:Ge compositions due to the difference of the chemical reactivity between Pt, Ge, and GaAs. The formation and distribution of a ternary PtGe:As phase are the determining factors for the contact resistivity. The outstanding thermal stability of the contact is due to the Ta-Si-N barrier layer which closes the GaAs-trilayer system and protects their chemical equilibria from being disrupted by an inflow of Au from the metallization layer. Without the barrier layer, the morphology of the contact degrades badly at 450 °C after 20 h or less.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.356651

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7

Digitale Medien

Reaction of Ta thin film with single crystalline (001) β-SiC (1994)

Chen, J. S. ; Kolawa, E. ; Nicolet, M.-A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 2169-2175

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The reaction between a sputter-deposited Ta film (320 nm thick) and a single crystalline (001) β-SiC substrate induced by vacuum annealing at temperatures of 600–1200 °C for 1 h (30 min at 1100 °C) is investigated by 3 MeV He++ backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 °C or at lower temperatures. At 900 °C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000 °C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of β-SiC/TaC/carbon-stabilized Ta5Si3/α-Ta5Si3/Ta2C. The diffusion path at 1000 °C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 °C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200 °C for 1 h. At that point, the reacted layer has a laterally very uneven structure and morphology.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357629

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Digitale Medien

Stability of rhenium thin films on single crystal (001) β-SiC (1994)

Chen, J. S. ; Kolawa, E. ; Nicolet, M.-A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 897-901

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thermal reactions of Re thin films in contact with single crystalline (001) β-SiC at temperatures between 700 and 1100 °C for 30 min are investigated by MeV He++ backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy (plan-view and cross-sectional). No reaction between Re and SiC is observed for any annealing conditions. The average grain size of the as-deposited Re film is 220 nm and increases to 280 nm after annealing at 1100 °C for 30 min. A strong {0001}Re fiber texture is also observed after annealing. The chemical stability of Re thin films on SiC is consistent with the earlier study of solid-phase stability in the ternary Re-Si-C system which shows that Re and its silicides have tie lines with SiC at 1600 °C. It also coincides with calculations of the free energy of reaction from assessed thermodynamic data for rhenium silicides and SiC. The implications of this Re stability with SiC for applications of Re as a metal for electrical contact to SiC-based devices are discussed.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.356444

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9

Digitale Medien

Reactively sputtered Ti-Si-N films I. Physical properties (1997)

Sun, X. ; Reid, J. S. ; Kolawa, E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 656-663

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.364133

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10

Digitale Medien

Reactively sputtered Ti-Si-N films. II. Diffusion barriers for Al and Cu metallizations on Si (1997)

Sun, X. ; Reid, J. S. ; Kolawa, E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 81 (1997), S. 664-671

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.364206

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