Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
Datenquelle
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2706-2708 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Native oxidation ("wet'' oxidation via H2O vapor+N2) of InAlAs is employed to fabricate long wavelength (λ∼1.5 μm) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes. Data are presented on gain-guided native-oxide-defined stripe-geometry lasers (40 μm×500 μm) with threshold currents of 200 mA (1 kA/cm2) emitting with multiple longitudinal modes centered at λ∼1.5 μm. The threshold currents, approximated as Ith=I0 exp(T/T0), exhibit a characteristic temperature of T0∼49 K and an operating temperature as high as T=70 °C. Maximum continuous output powers of 140 mW/facet (uncoated facets) and a differential quantum efficiency of 38% are achieved.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356200
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Deep-oxide planar buried-heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3221-3223 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on deep-oxide planar buried-heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes fabricated using a self-aligned process that combines native oxide and impurity-induced layer disordering (IILD) technologies. Silicon IILD intermixes the waveguide layers on either side of an active area stripe and allows "wet'' oxidation to penetrate and create a low-index (n∼1.7) deep-oxide structure for electrical and optical confinement. Continuous-wave (cw) threshold currents of ∼3.4 mA are measured for ∼3.5-μm-wide active regions (L∼250 μm), with maximum cw output powers greater than 29 mW/facet and external differential quantum efficiencies as high as 70% (300 K, uncoated facets). © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.112418
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Planar single-facet teardrop-shaped AlxGa1−xAs-GaAs quantum well heterostructure laser (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1818-1820 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented demonstrating the laser operation of an AlxGa1−xAs-GaAs quantum well heterostructure (QWH) crystal patterned into a smoothly curved folded resonator, a "teardrop''-shaped resonator, with a single output facet. A deep AlxGa1−xAs native oxide formed entirely through the top confining layer is utilized to produce a large effective index step for lateral optical confinement. The teardrop-shaped laser operates primarily in a TM (transverse magnetic) longitudinal mode polarized with a TM/TE (transverse electric) power ratio of 7:1. Continuous wave 300 K threshold currents as low as ∼127 mA, external differential quantum efficiencies of η∼15%, and total output power in excess of 75 mW (uncoated facet) are achieved.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110673
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Buried-oxide ridge-waveguide InAlAs-InP-InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2821-2823 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Native oxide technology is used to fabricate long wavelength (λ∼1.3 μm) InAlAs-InP-InGaAsP quantum well heterostructure laser diodes with a buried oxide undercutting and constricting the ridge-waveguide active region. The buried native oxide of InAlAs constricts the current and reduces edge and surface losses. Data are presented showing threshold currents as low as ∼140 mA for ∼13-μm-wide stripes (L∼750 μm), with maximum continuous wave output powers as high as ∼225 mW/facet and external differential quantum efficiencies up to 67% (300 K, uncoated facets).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.111436
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Deep-oxide curved resonator for low-threshold AlGaAs–GaAs quantum well heterostructure ring lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 73-75 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on curved-resonator AlGaAs–GaAs quantum well heterostructure laser diodes employing a deep-oxide guiding structure formed by a combination of impurity-induced layer disordering and native oxidation. Room-temperature, continuous wave (cw) threshold currents as low as ∼13 mA are measured for a ∼5 μm wide, 100 μm radius half-ring laser employing a deep-oxide structure. For similar 150 μm radius devices, cw threshold currents as low as ∼19 mA are observed (∼7 μm width), with total output powers exceeding 30 mW. Spectral data indicate single-mode operation over a large current range (25–100 mA). The low-threshold characteristics are attributed to the excellent current and optical confinement of the deep-oxide structure, combined with low edge scattering loss. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115511
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Improved thermal stability of AlGaAs–GaAs quantum well heterostructures using a "blocking'' Zn diffusion to reduce column-III vacancies (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1859-1861 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on the reduction of layer intermixing (disordering) in AlGaAs–GaAs quantum well heterostructures (QWH) during high-temperature anneals by an initial low-temperature "blocking'' Zn diffusion. Room-temperature photoluminescence measurements of the increase in the lowest electron-to-heavy-hole transition energy in the QW are used to characterize the extent of layer intermixing. Doped (C and Si) samples annealed (850 °C, 12 h) after a low-temperature blocking Zn diffusion (480 °C) exhibit reductions in energy shift from ∼177 meV to as little as ∼18 meV. Similar effects are also observed, but to a lesser extent, for undoped samples. The improved thermal stability is attributed to a Zn-diffusion induced reduction in the number of column-III vacancies in the active layers and is confirmed by secondary-ion mass spectroscopy measurements. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114356
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Deep-oxide planar buried-channel AlGaAs–GaAs quantum well heterostructure waveguides with low bend loss (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1912-1914 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on planar S-bend waveguides fabricated in an AlxGa1−xAs–GaAs p-n quantum well heterostructure (QWH) crystal by a self-aligned process combining Si impurity-induced layer disordering and "wet'' native oxidation. In the process, a deep, low-index (n∼1.7) oxide cladding structure is formed, creating a buried channel in the QWH core layers and defining the routing properties of ∼2.5-μm-wide guides. Deep-oxide S-bend waveguides with 100 μm offsets exhibit low excess bend losses with a 3 dB transition distance less than 140 μm for transverse electric polarization. These bend losses are significantly lower than those measured for oxide-only and disordered-only guides. Excellent optical isolation of the guided signal is observed, indicating very little crosstalk occurs between adjacent guides. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113319
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Native-oxide-defined low-loss AlGaAs-GaAs planar waveguide bends (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2265-2267 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data are presented on planar waveguide S-bends fabricated from AlxGa1−xAs-GaAs p-n quantum well heterostructure (QWH) laser material by a wet native oxidation process. The oxide's low refractive index (n∼1.55) is used to define ∼3.5-μm-wide single mode guides exhibiting low excess losses for raised-cosine S-bends with 100 μm offsets. The waveguide's routing properties are determined by the lateral effective index profile which is controlled by the native oxide thickness. Guides with two different oxidation depths are investigated. For the deepest oxidation, excess bend losses of 3 dB are measured for transition distances of ∼180 μm and (approximately-less-than)120 μm for transverse electric (TE) and transverse magnetic (TM) polarizations, respectively. Theoretical loss calculations for the guides show good agreement with measured data. Guides with a shallow oxidation exhibit 3 dB transition lengths of ∼260 μm and ∼220 μm for the TE and TM polarizations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110548
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Thin upper-confining layer AlxGa1−xAs-GaAs quantum well heterostructure laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1006-1008 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: AlxGa1−xAs-GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper confining layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far-field patterns, low broad-area pulsed threshold current densities, and high differential quantum efficiencies. The diodes with thinnest upper confining layers, ∼0.2 μm, have broad-area pulsed threshold current densities as low as Jth∼169 A/cm2 and a total external differential quantum efficiency ηT∼53% (∼500 μm long cavities). Stripe-geometry (40 μm wide) laser diodes made from the crystals with 0.2 μm upper confining layers exhibit room-temperature continuous (cw) threshold currents of 60 mA, output powers of ∼200 mW/facet (uncoated), and transverse far-field patterns with a full angle half power (FAHP) of 48°. Nonoptimized narrow-stripe (∼4 μm) native-oxide index-guided laser diodes fabricated on the same 0.2 μm confining layer QWH crystal operate at pulsed thresholds as low as 9 mA and continuous thresholds of 16 mA, with total external differential quantum efficiencies of 39% pulsed and 30% cw.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.108563
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (≤2000 Å) active regions (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active layer to ≤2000 Å and increasing the internal quantum efficiency by using multiple thin (≤500 Å) active layers. The maximum luminous efficiency achieved is 73.7 lm/W at λp∼615 nm and the maximum external quantum efficiency is 32.0% at λp∼632 nm. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123810
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...