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  • 1
    Electronic Resource
    Electronic Resource
    Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3852-3856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron modulation-doped Si/SiGe heterojunctions have been grown by molecular beam epitaxy. The two-dimensional hole gas formed along the heterojunction, just inside the alloy, has a sheet density in the range 2–5×1011 cm−2 and a typical mobility at 5 K of 2000 cm2 V−1 s−1. An explanation for the magnitude of the mobility is sought by considering likely scattering mechanisms, namely those due to remote impurities, interface roughness, alloy disorder, and interface impurities. A self-consistent model is used to determine the sheet density in terms of structural and energy parameters and dopant concentrations in the heterostructure. It is shown that the presence of negatively charged impurities at the heterojunction provides the basis for a consistent interpretation of the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352895
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 118-125 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron doped layers were grown by silicon molecular beam epitaxy to establish incorporation processes at temperatures between 900 and 450 °C. For temperatures exceeding 650 °C a surface accumulated phase of boron was formed when doping levels exceeded solid solubility limits. The properties of this surface phase were used to determine solubility limits for boron in silicon. Above 750 °C, the measured equilibrium solubility limit was in the 1019-cm−3 range in good agreement with previously published annealing data and showing a gradual decrease with decreasing temperature. Below 650 °C, the processes leading to the formation of the surface phase were kinetically limited, manifested by a sharp increase in boron solubility limit, with completely activated levels above 1 × 1020 cm−3 realized. At intermediate growth temperatures the degree of dopant activation was found to be dependent on growth rate. The stability of fully activated highly-doped boron layers, grown at low temperatures, to ex situ annealing is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351363
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of Si/Si1−xGex/Si heterostructures by capacitance-transient spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4237-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level distributions have been investigated in B-doped Si/Si1−xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1−xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357332
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  • 4
    Electronic Resource
    Electronic Resource
    Elemental boron doping behavior in silicon molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 481-483 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2×1020 cm−3, to elucidate profile control and electrical activation over the growth temperature range 450–900 °C. Precipitation and surface segregation effects were observed at doping levels of 2×1020 cm−3 for growth temperatures above 600 °C. At growth temperatures below 600 °C, excellent profile control was achieved with complete electrical activation at concentrations of 2×1020 cm−3, corresponding to the optimal MBE growth conditions for a range of Si/SixGe1−x heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104614
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  • 5
    Electronic Resource
    Electronic Resource
    Concentration of atomic hydrogen diffused into silicon in the temperature range 900–1300 °C (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2933-2935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped Czochralski silicon samples with [B]∼1017 cm−3 have been heated at various temperatures in the range 800–1300 °C in an atmosphere of hydrogen and then quenched. The concentration of [H-B] pairs was measured by infrared localized vibrational mode spectroscopy. It was concluded that the solubility of atomic hydrogen is greater than [Hs] = 5.6 × 1018 exp( − 0.95 eV/kT)cm−3 at the temperatures investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104726
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  • 6
    Electronic Resource
    Electronic Resource
    Very high two-dimensional hole gas mobilities in strained silicon germanium (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3470-3472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to ≤13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950 °C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V−1 s−1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111244
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  • 7
    Electronic Resource
    Electronic Resource
    Probing the interfacial and sub-surface structure of Si/Si1−xGex multilayers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2849-2851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon–silicon/germanium (Si/Si1−xGex) heterostructure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapor deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Si1−xGex (x∼0.22) in both two- and three-period samples, can be uniquely identified with a resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition. The total Ge content of each sample was confirmed using conventional Rutherford backscattering spectrometry. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113450
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  • 8
    Electronic Resource
    Electronic Resource
    Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1453-1455 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V−1 s−1 at 5.4 K being achieved at the relatively high-growth temperature of 640 °C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107515
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  • 9
    Electronic Resource
    Electronic Resource
    Evidence for quantum confinement in the photoluminescence of porous Si and SiGe (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2118-2120 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used anodization techniques to process porous surface regions in p-type Czochralski Si and in p-type Si0.85Ge0.15 epitaxial layers grown by molecular beam epitaxy. The SiGe layers were unrelaxed before processing. We have observed strong near-infrared and visible light emission from both systems. Analysis of the radiative and nonradiative recombination processes indicate that the emission is consistent with the decay of excitons localized in structures of one or zero dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106098
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  • 10
    Electronic Resource
    Electronic Resource
    Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition (1985)
    Springer
    Applied physics 37 (1985), S. 145-151 
    Details
    ISSN: 1432-0630
    Keywords: 61.80.Jh ; 73.60.Fw ; 82.65−i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar+ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617499
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