ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Normal diffusion of interstitial oxygen atoms (Oi ) accounts for the rate of oxygen aggregation in silicon for T 〉 500
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00185929
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