ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The dependence of the degradation of high-power quantum-well GaAs/AlGaAs laser diodes, grown by molecular-beam epitaxy, on the crystal perfection of the individual layers of the heterostructure is investigated. The crystal perfection of the layers is estimated by highresolution x-ray spectrometry. A numerical fit of the diffraction-reflection curves is performed using the Debye-Waller static factor. It is shown that considerably higher crystal perfection of laser heterostructures can be obtained by using as the waveguide layers binary AlAs/GaAs superlattices instead of the solid solution AlGaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187734
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