ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The formation of WN x /GaAs Schottky contacts using selective ion implantation of nitrogen into the sputtered tungsten film has been demonstrated. The contacts were characterized by Auger electron spectroscopy and current-voltage measurements. The composition of WN x films and the thermal stability of WN x /GaAs contacts were investigated. Good thermal stability of WN x /GaAs contacts compared with a W/GaAs contact was observed after capless rapid thermal annealing at 450, 800 and 950°C for 10 s.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00695512
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